A Robust Cmos Rf Front-End Design for 3.1-4.8Ghz Mb-Ofdm Uwb System

Guang Yang,Wei Li,Ning Li,Junyan Ren
DOI: https://doi.org/10.1109/icsict.2008.4734845
2008-01-01
Abstract:This paper presents a robust RF front-end for 3.1-4.8-GHz direct-conversion Ultra-wideband (UWB) applications such as the MB-OFDM UWB. The circuits contain a gain controllable low-noise amplifier (LNA) with resistive feedback, a merged quadrature mixer with static current injection, and local oscillator (LO) buffers. Post-layout simulations show that the fully differential front-end achieves a maximum conversion gain of 25.5dB and a minimum of 16.5dB, an input return loss of better than -8dB, a minimum noise figure of 4.5dB in high-gain mode and an input referred 3(rd) intercept point (IIP3) of -4.3dBm in low-gain mode while drawing 26.3mA current from a 1.8-V supply without the buffers. The ESD protected chip is implemented in a 0.18-mu m CMOS technology with an active area of 0.48mm(2).
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