Abstract:Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS2 FETs, synthesized using the mechanical exfoliation of bulk MoS2 crystal, on the Si/SiO2 substrate. Our MoS2 FET show a room-temperature field-effect mobility μFE ~40 cm2·V−1·s−1, which increases with decreasing temperature, stabilizing at 80 cm2·V−1·s−1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, Peff (0.02 μW < Peff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW−1, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

Atomic layer self-transducing MoS2 vibrating channel transistors with 0.5 pm/Hz1/2 displacement sensitivity at room temperature

Extreme mechanical tunability in suspended MoS 2 resonator controlled by Joule heating

Electromechanical coupling and motion transduction in β -Ga 2 O 3 vibrating channel transistors

Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor

Temperature Sensor of MoS2 Based on Hybrid Plasmonic Waveguides

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

MoS2 Transistors Operating at Gigahertz Frequencies

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method.

MoS2/organics Superlattices for Surface-Enhanced Supra-Nernstian Biochemical Detection

A fast 2D MoS2 photodetector with ultralow contact resistance

High-Stability Ph Sensing With A Few-Layer Mos2 Field-Effect Transistor

Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements

Strain-enhanced dynamic ranges in two-dimensional MoS2 and MoTe2 nanomechanical resonators

Charge sensitivity enhancement via mechanical oscillation in suspended carbon nanotube devices

Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel