Abstract:Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to understand the physics determining their scalability and establish a physics-based model for a robust device design of AOS BEOL FETs. However, the advantage emphasized to date has been mainly an ultralow leakage current of these devices. A device modeling that comprehensively optimizes the threshold voltage (VT), the short-channel effect (SCE), the subthreshold swing (SS), and the field-effect mobility (µFE) of short-channel AOS FETs has been rarely reported. In this study, the device modeling of two-steps oxygen anneal-based submicron indium-gallium-zinc-oxide (IGZO) BEOL FET enabling short-channel effects suppression is proposed and experimentally demonstrated. Both the process parameters determining the SCE and the device physics related to the SCE are elucidated through our modeling and a technology computer-aided design (TCAD) simulation. In addition, the procedure of extracting the model parameters is concretely supplied. Noticeably, the proposed device model and simulation framework reproduce all of the measured current-voltage (I-V), VT roll-off, and drain-induced barrier lowering (DIBL) characteristics according to the changes in the oxygen (O) partial pressure during the deposition of IGZO film, device structure, and channel length. Moreover, the results of an analysis based on the proposed model and the extracted parameters indicate that the SCE of submicron AOS FETs is effectively suppressed when the locally high oxygen-concentration region is used. Applying the two-step oxygen annealing to the double-gate (DG) FET can form this region, the beneficial effect of which is also proven through experimental results; the immunity to SCE is improved as the O-content controlled according to the partial O pressure during oxygen annealing increases. Furthermore, it is found that the essential factors in the device optimization are the subgap density of states (DOS), the oxygen content-dependent diffusion length of either the oxygen vacancy (VO) or O, and the separation between the top-gate edge and the source-drain contact hole. Our modeling and simulation results make it feasible to comprehensively optimize the device characteristic parameters, such as VT, SCE, SS, and µFE, of the submicron AOS BEOL FETs by independently controlling the lateral profile of the concentrations of VO and O in two-step oxygen anneal process.

Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Extraction of Density of Localized States in Indium Zinc Oxide Thin Film Transistor

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

P‐5: Improved Split C–V Technique for Effective Mobility Extraction in Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs with Short Channel

A Semi-Analytical Extraction Method For Interface And Bulk Density Of States In Metal Oxide Thin-Film Transistors

Analytical Extraction Method for Density of States in Metal Oxide Thin-Film Transistors by Using Low-Frequency Capacitance–Voltage Characteristics

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Analyzing Acceptor-like State Distribution of Solution-Processed Indium-Zinc-Oxide Semiconductor Depending on the In Concentration

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin Probe Force Microscopy

Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states