Abstract:Density of localized states (DOS) over the band-gap determines the electrical and instability characteristics in the indium zinc oxide thin film transistor (IZO TFT). In order to propose an accurate extraction method for DOS in the bulk region, low frequency noise and multi-frequency capacitance voltage characteristics are measured and analyzed in this paper. Firstly, the relationship between surface potential and gate voltage is extracted based on subthreshold I-V characteristics. The extraction results show that the surface potential increases with the increase of gate voltage in the sub-threshold region. When the Fermi level is close to the bottom of conduction band, the increase of surface potential should be saturated. Secondly, drain current noise power spectral densities in the IZO TFTs under different operation modes are measured. Based on carrier number fluctuation mechanism, the flat-band voltage noise power spectral density is extracted and localized state near IZO/SiO2 interface is then calculated. By considering the emission and trapping processes of carriers between localized states, the distribution of bulk trap density in the band-gap is extracted based on low frequency noise measurement results. The experimental results show an exponential tail state distribution in the band-gap while NTA is about 3.421020 cm-3eV-1 and TTA is about 135 K. Subsequently, contact resistances are then extracted by combining capacitance-voltage characteristics with I-V characteristics in the linear region. The extrinsic parasitic resistances at gate, source, drain are separated. By considering charges trapped in the localized states and free carriers, the distributions of deep states and tail states in the active layer of IZO TFT are extracted through multi-frequency capacitance-voltage characteristics. The experimental results also show an exponential deep state and tail state distribution in the band-gap while NDA is about 5.41015 cm-3eV-1, TDA is about 711 K, NTA is about 1.991020 cm-3eV-1, and TTA is about 183 K. The above two proposed extraction methods are compared and analyzed. The deviation between two extraction results may relate to the existence of neutral trap in the gate dielectric which is also an important source of low frequency noise in the IZO TFT.

Analytical Extraction Method for Density of States in Metal Oxide Thin-Film Transistors by Using Low-Frequency Capacitance–Voltage Characteristics

A Semi-Analytical Extraction Method For Interface And Bulk Density Of States In Metal Oxide Thin-Film Transistors

Extraction of Density of Localized States in Indium Zinc Oxide Thin Film Transistor

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

Analyzing Acceptor-like State Distribution of Solution-Processed Indium-Zinc-Oxide Semiconductor Depending on the In Concentration

Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Low-Frequency Noise Modeling of Amorphous Indium–Zinc-Oxide Thin-Film Transistors

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Extracting interface trap density in ?-Ga<sub>2</sub>O<sub>3</sub>-based heterointerface

Extraction Technique for the Conduction Band Minimum Energy in Amorphous Indium–Gallium–Zinc–Oxide Thin Film Transistors

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature

Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states