Thermoelectric Properties of CrS 2- x Te x ( x : 0, 1, 2) Dichalcogenides Monolayers: First-Principles Study

Farva Tufail,Abdull Farooq,Altaf Ur Rahman,Zeinhom M. El-Bahy,Gaber A. M. Mersal,M. Abdul,Muhammad Nisar,Bao Jingfu
DOI: https://doi.org/10.1021/acsomega.4c01767
IF: 4.1
2024-06-11
ACS Omega
Abstract:In this study, we conducted first-principles calculations interfaced with Boltzmann transport theory to examine the carrier-dependent thermoelectric properties of CrS(2-x) Te (x) (x: 0, 1, 2) dichalcogenides monolayers. We conducted a systematic analysis of the structural, phonon band structures, elastic properties, electronic structures, and thermoelectric properties, of electron (e) and hole (h) doped CrS(2-x) Te (x) (x: 0, 1, 2) dichalcogenides monolayers. The studied 2D TMDCs exhibit...
chemistry, multidisciplinary
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the thermoelectric properties of CrS2−xTex (x: 0, 1, 2) dichalcogenide monolayer materials. Specifically, through first - principles calculations combined with Boltzmann transport theory, the researchers systematically analyzed the structural stability, phonon band structure, elastic properties, electronic structure and thermoelectric properties of these materials under electron and hole doping conditions. The main objectives of the study include: 1. **Structural stability**: Verify the structural stability of CrS2−xTex monolayer materials, and confirm their kinetic and thermodynamic stabilities by calculating the formation energy and phonon band structure. 2. **Electronic structure**: Determine the electronic structure of CrS2−xTex monolayer materials, especially the size of the direct band gap, which is crucial for understanding the electrical conductivity and thermoelectric properties of the materials. 3. **Thermoelectric properties**: Evaluate the thermoelectric transport coefficients of CrS2−xTex monolayer materials at different temperatures and doping concentrations, especially calculate the influence of electron and hole doping on the thermoelectric figure - of - merit (ZT value). 4. **Optimizing thermoelectric materials**: Look for the optimal doping concentration that can increase the ZT value, thereby designing high - performance thermoelectric materials suitable for various thermoelectric devices. Through these studies, the author hopes to provide theoretical basis and technical support for the development of new and efficient thermoelectric materials.