Ballistic thermoelectric properties of monolayer semiconducting transition metal dichalcogenides and oxides

G. Özbal,R. T. Senger,C. Sevik,H. Sevinçli
DOI: https://doi.org/10.1103/PhysRevB.100.085415
2019-11-22
Abstract:Combining first-principles calculations with Landauer-Büttiker formalism, ballistic thermoelectric transport properties of semiconducting two-dimensional transition metal dichalcogenides (TMDs) and oxides (TMOs) (namely ${\mathrm{MX}}_{2}$ with M = Cr, Mo, W, Ti, Zr, Hf; X = O, S, Se, Te) are invest... [Phys. Rev. B 100, 085415] Published Mon Aug 12, 2019
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