Abstract:MgB2 is a superconductor constituted by alternating Mg and B planar layers: doping of both the sublattices has been observed experimentally to destroy the outstanding superconductive properties of this simple material. In this study we present the investigation by first principles methods at atomistic scale of the phase separation induced by aluminum doping in the MgB2 lattice. The calculations were performed by Density Functional Theory in generalized gradient approximation and pseudopotentials. Orthorhombic oP36 supercells derived by the primitive hR3 MgB2 cell were built in order to simulate the aluminum-magnesium substitution in the 0-50% composition range. The computational results explained the occurrence of a phase separation in the Mg1-xAlxB2 system. The miscibility gap is predicted to be induced by an order-disorder transition in the metallic sublattice at high Al concentration. Indeed at 1000 K aluminum substitution takes place on random Mg sites for concentration up to 17% of the total metallic sites, whereas at Al content larger than 31% the substitution is energetically more favorable on alternated metallic layers (Mg undoped planes alternate with Mg-Al layers). The formation of this Al-rich phase lead at 50% doping to the formation of the double omega Mg1/2Al1/2B2 ordered lattice. From 17 to 31% the two phases, the disordered Mg1-xAlxB2 (x < 0.17) and the ordered Mg1/2+yAl1/2-yB2 (y < 0.19) lattices, coexist. This phase separation is driven by the balance of the enthalpy and entropy contributions to the Gibbs energy. Present DFT-GGA calculations indicate that this thermodynamically predicted suppression of the Al doping disorder in the metallic sublattice of MgB2 occurs in parallel with the collapse of the superconductive properties of the material.

Perfect Domain-Lattice Matching Between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire

MgB2 superconducting thin films with a transition temperature of 39 Kelvin

Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

Electron Microscopy Studies of Epitaxial MgB2 Superconducting Thin Films Grown by in Situ Reactive Evaporation

Thick MgB2 film with (101) oriented micro-crystals

Growth and Crystal Orientation Regulation of Aluminum Diboride Films Induced by an Al Template

GROWTH AND PROPERTIES OF SUPERCONDUCTING MgB_2 THIN FILM FABRICATED ON Al_2O_3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION

Aligned single crystal MgB<sub>2</sub> nanowires

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Biaxial Strain Engineering on the Superconducting Properties of MgB2 Monolayer

MgB2 superconductor thin films on Si and Al2O3 substrates

Superconducting Mgb2 Thin Films On Silicon Carbide Substrates By Hybrid Physical-Chemical Vapor Deposition

Ultrathin MgB2films Fabricated on Al2O3substrate by Hybrid Physical–chemical Vapor Deposition with Hightcandjc

Thickness Dependenceof Superconducting Properties of MgB2 THIN FILMS on Al2O3 Substrates

MgB2 thick film with TC = 40.2 K deposited on sapphire substrate

Order-Disorder Transition and Phase Separation in the MgB2 Metallic Sublattice Induced by Al Doping

40.2 K CRITICAL TEMPERATURE OF MgB 2 THICK FILM DEPOSITED ON SUBSTRATE OF SAPPHIRE

Thick Polycrystalline MgB2film on Cu Substrate by Hybrid Physical–chemical Vapour Deposition

Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy

Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties

Growth and Anisotropic Transport Properties of Off-Axis MgB2 Thin Films