Abstract:Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.

Visible light metasurfaces based on gallium nitride high contrast gratings

Hybrid Bilayer Plasmonic Metasurface Efficiently Manipulates Visible Light

Broadband Beam Deflector for GaN Based Micro-LED with a Phase-Gradient Metasurface in Entire Visible Spectrum

Visible Chalcogenide Metadevices

High-angle deflection of metagrating-integrated laser emission for high-contrast microscopy

Polarization-insensitive GaN metalenses at visible wavelengths

GaN vortex metasurface for interference and broadband characteristics

Efficient silicon metasurfaces for visible light

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Wide-angle and high-efficiency achromatic metasurfaces for visible light

Metasurface Integrated High Energy Efficient and High Linearly Polarized InGaN/GaN Light Emitting Diode.

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

Polarization-independent and High-Efficiency Dielectric Metasurfaces for Visible Light.

Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating

Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication

Surface lattice resonances for beaming and outcoupling green μ LEDs emission

Visible-Frequency Dielectric Metasurfaces for Multiwavelength Achromatic and Highly Dispersive Holograms

A Spin‐Encoded All‐Dielectric Metahologram for Visible Light

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

Polarized GaN-based LED with an Integrated Multi-Layer Subwavelength Structure.

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating