Abstract:Ultra-wide bandgap (UWBG) semiconductors have great potential for high-power electronics, radio frequency electronics, deep ultraviolet optoelectronic devices, and quantum information technology. Recently, the two-dimensional UWBG GaPS 4 was first applied to the solar-blind photodetector in experiments, which was found to have remarkable performance, such as high responsivity, high quantum efficiency, etc., and promising applications in optoelectronic devices. However, the knowledge of monolayer (ML) GaPS 4 for us is quite limited, which hinders its design and application in optoelectronic devices. Here, we focus on the properties of electronic structure and intrinsic defects in ML GaPS 4 by first-principles calculations. We confirmed that the fundamental gap of ML GaPS 4 is 3.87 [Formula: see text], while the optical gap is 4.22 [Formula: see text]. This discrepancy can be attributed to the inversion symmetry of its structure, which limits the dipole transitions from valence band edges to conduction band edges. Furthermore, we found that intrinsic defects are neither efficient p-type nor n-type dopants in ML GaPS 4 , which is consistent with experimental observations. Our results also show that if one expects to achieve p-type ML GaPS 4 by selecting the appropriate dopant, P-rich conditions should be avoided for the growth process, while for achieving n-type doping, S-rich growth conditions are inappropriate. This is because due to the low strain energy, [Formula: see text] has very low formation energy, which leads to the Fermi levels ([Formula: see text]) pinning at 0.35 [Formula: see text] above the valence band maximum and is not beneficial to achieve p-type ML GaPS 4 under the P-rich conditions; the large lattice relaxation largely lowers the formation energy of [Formula: see text], which causes the [Formula: see text] pinning at 0.72 [Formula: see text] below the conduction band minimum and severely prevents ML GaPS 4 from being n-type doping under the S-rich conditions. Our studies of these fundamental physical properties will be useful for future applications of ML GaPS 4 in optoelectronic devices.

Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate

Deep-level Defects in Gallium Oxide

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Native defects and their complexes in spinel LiGa5O8: the puzzle of p-type doping

Donor and Acceptor Characteristics of Native Point Defects in GaN

Defect Physics of Ternary Semiconductor Zn Ge P 2 with a High Density of Anion-Cation Antisites: A First-Principles Study

Correlating the Electronic Structures of Β-Ga2o3 to Its Crystal Tilts Induced Defects at Nanoscale

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor beta-Ga2O3

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS.

Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study

Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Optoelectronic properties exploration of native point defects on GaN nanowires

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Accurate Band Gaps for Semiconductors from Density Functional Theory

Unified theory of the direct or indirect bandgap nature of conventional semiconductors