Abstract:Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a drain contact to provide a drift of multiplicated charge carriers along the semiconductor surface. A high gain(more than 10^4) of photocurrent was achived due to the local negative feedback effect realizied on the Si-SiO_2 boundary. Special attention is paid to the possibilities of development of a supersensitive avalanche CCD (charge coupled device) for detection of individual photons in visible and ultraviolet spectral regions. Experimental results obtained with a two-element CCD prototype are discussed.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a highly sensitive solid - state light detector capable of detecting weak light pulses (consisting of a few photons) at room temperature to replace the traditional photomultiplier tube (PMT). Specifically, the author proposes a new avalanche photodetector (APD) based on MOS (metal - oxide - semiconductor) technology and elaborates on its physical principles and main characteristics in detail. ### Main problems: 1. **Replace traditional photomultiplier tubes**: Existing commercial photomultiplier tubes (PMT) perform excellently in detecting weak light pulses, but they are large in size and high in cost. Researchers have been looking for solid - state solutions that can replace PMT in physical experiments and medical imaging. 2. **Achieve single - photon detection**: Especially in the visible and ultraviolet spectral regions, developing detectors capable of efficiently detecting single photons at room temperature is an important challenge. Traditional solid - state detectors perform poorly in this regard, so new designs and technologies are required to improve sensitivity. 3. **Utilize the local negative feedback effect (LNF)**: By introducing the local negative feedback effect, the author realizes a self - stabilizing avalanche process, thereby improving the gain and stability of the detector. This effect enables the detector to self - regulate the voltage drop within a specific area, avoiding overheating and damage. ### Solutions: The author proposes a new type of avalanche photodetector (APD), and its key design features include: - **Semi - transparent titanium gate electrode**: There is a silicon dioxide insulating layer between it and the semiconductor surface, which is used to provide the drift path for carriers. - **Local negative feedback effect (LNF)**: By introducing additional ion implantation at the p - n junction, the breakdown voltage is reduced, and the carriers are made to drift from the avalanche region to the drain contact point by using a high - resistance layer, thereby realizing a self - stabilizing avalanche process. - **High gain**: The experimental results show that the detector has a photocurrent gain of more than \(10^4\) in the visible and ultraviolet spectral regions. ### Application prospects: This research shows the possibility of developing ultra - sensitive multi - channel light detectors and avalanche - type CCDs (charge - coupled devices) for single - photon detection. These characteristics make it have broad prospects for future applications in high - energy physics, high - speed photonics, and medical imaging. Through these improvements, the new APD can not only efficiently detect single photons at room temperature, but also has high spatial uniformity and multi - channel operation capabilities, providing strong support for future scientific research and applications.

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