A Highly Sensitive Photodetector Based on Deepdepletion Effects in SOI Transistors

M. Arsalan,XY. Cao,BR. Lu,YF. Chen,A. Zaslavsky,S. Cristoloveanu,M. Bawedin,J. Wan

DOI: https://doi.org/10.1109/s3s.2018.8640150

2018-01-01

Abstract:This work reports a transient effect found in silicon-on-insulator (SOI) substrates, where the current of the transistor changes slowly under a back-gate voltage pulse. We show via TCAD simulation that the operating principle arises from deep depletion in the SOI substrate. This effect is further used for photodetection with extremely high $7.3 \times 10 ^{6}\mathrm {A}/\mathrm {W}$ responsivity and signal read-out without need for charge transfer.