Abstract:A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Novel Photodetectors and Image Sensors Based on Silicon-on-insulator Substrate.

Novel Photodetectors and Image Sensors Based on SOI Substrate

Novel Photodetectors Based on SOI and Two-dimensional Materials

Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

ICPD: an SOI-based Photodetector with High Responsivity and Tunable Response Spectrum

SOI CMOS Imager with Suppression of Cross-Talk

A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

Novel Photodetector Based On Fd-Soi Substrate With Interface Coupling Effect

Novel Silicon on Insulator Monolithic Active Pixel Structure with Improved Radiation Total Ionizing Dose Tolerance and Reduced Crosstalk Between Sensor and Electronics

A Novel Photodetector with the Embedded Field-Induced P-N Photodiode in the SOI Substrate

Photodetector Based On Silicon-On-Insulator With High Responsivity

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Novel Semiconductor Devices Based on SOL Substrate

Fully Depleted SOI Pixel Detector with Multijunction Structure in P-Type Substrate

A Review of SOI Monolithic Active Pixel Sensors for Radiation Detection Applications

A New Photodetector on SOI

An SOI Photodetector With Field-Induced Embedded Diode Showing High Responsivity and Tunable Response Spectrum by Backgate

A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

Improved SOI Image Sensor Design Based on Backside Illumination on Silicon-On-Sapphire (SOS) Substrate