Novel Semiconductor Devices Based on SOL Substrate

K. Xiao,J. Liu,J. N. Deng,Y. L. Jiang,W. Z. Bao,A. Zaslavsky,S. Cristoloveanu,X. Gong,J. Wan
DOI: https://doi.org/10.1109/cstic49141.2020.9282566
2020-01-01
Abstract:In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z2- FET , based on a feedback mechanism, has been demonstrated as suitable for many applications. The PISD, capable of in-situ photoelectron sensing, has been used as a one-transistor active pixel sensor (1T-APS). Furthermore, an SOI/MoS 2 heterojunction FET has been demonstrated as both a photodetector with a dynamic response spectrum and as a novel one-transistor wavelength detector (1T-WD) with an output signal sensitive to the variation of wavelength rather than intensity.
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