Probing the potential landscape inside a two-dimensional electron-gas

J.J. Koonen,H. Buhmann,L. W. Molenkamp

DOI: https://doi.org/10.1103/PhysRevLett.84.2473

1999-04-21

Abstract:We report direct observations of the scattering potentials in a two-dimensional electron-gas using electron-beam diffaction-experiments. The diffracting objects are local density-fluctuations caused by the spatial and charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination, or by cooling the sample down under depleted conditions.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to directly observe and analyze the scattering potential in two - dimensional electron gas (2DEG) through experiments, especially the local density fluctuations caused by the spatial distribution and charge state of dopants in GaAs-(Al,Ga)As heterostructures. Specifically, the research focuses on:

1. **Understanding the mechanism of high mobility**: At low temperatures, the electron mobility in 2DEG is theoretically limited by the scattering of ionized donors. Due to the random distribution of donor atoms in the doping layer, the scattering potential is not uniform. However, theory and experiments show that the spatial correlation between donors in different charge states can reduce the ionized - donor scattering, thereby increasing the mobility.

2. **Verifying the existence of donor - state correlations**: Previous studies could only indirectly prove the correlations between donor states. In this paper, these correlations are directly probed through electron - beam diffraction experiments, and information about the magnitude and position of the local scattering potential is provided.

3. **Investigating the influence of external conditions on the scattering potential**: By changing the donor configuration through external means such as illumination and bias cooling, how these changes affect the scattering potential and its influence on the electron - beam interference pattern are studied.

### Main problem summary:
- **Direct observation of the scattering potential**: Directly observe the scattering potential in 2DEG through electron - beam diffraction experiments.
- **Verifying donor - state correlations**: Provide direct evidence to support the spatial correlations between donors in different charge states.
- **Influence of external conditions**: Study how external conditions such as illumination and bias cooling change the scattering potential and its influence on the electron - beam interference pattern.

### Key findings:
- Through experiments and simulations, researchers were able to determine the position and magnitude of the scattering potential and found that its size is between 50 and 150 nanometers.
- Illumination and bias cooling can significantly change the scattering potential, leading to changes in the electron - beam interference pattern, which provides direct evidence for the existence of donor - state correlations.

These research results contribute to a deeper understanding of the electron behavior in 2DEG and the mechanism of high mobility, and provide theoretical and experimental bases for further optimizing the performance of semiconductor devices.