Abstract:The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle‐resolved photoemission spectroscopy (ARPES). Large‐scale first principles simulations are enabled by using DFT calculations with a machine‐learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes. InAs and InSb nanowires interfaced with superconductors are regarded as the leading materials platform for the potential realization of qubits based on Majorana zero modes. The electronic structure of InAs and InSb surfaces is investigated using first‐principles simulations based on density functional theory and angle resolved photoemission spectroscopy experiments. The effects of surface reconstructions and oxidation are elucidated.

Localization and other properties of electronic states in a semiconductor revealed by their response to surface doping and band-bending potential

Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface

2D electron gas formation on InAs wurtzite nanosheet surfaces

Effects Of Surface Structure And Ag-Sb Nanodots On Electronic Properties Of Pbte (100) Facets From First-Principles Calculations

Effects of surface structure and Ag-Sb nanodots on electronic properties of PbTe (1 0 0) facets from first-principles calculations

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Surface doping manipulation of the insulating ground states in Ta 2 Pd 3 Te 5 and Ta 2 Ni 3 Te 5

Surface photovoltaic effect and electronic structure of β -InSe

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

The Electronic Structure of Clean and Adsorbate-Covered Bi2se3: an Angle-Resolved Photoemission Study

Surface Photovoltage and Band Bending at Metal Gaas Interfaces - A Contact Potential Difference and Photoemission Spectroscopy Study

Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Surface Versus Bulk Dirac State Tuning in A Three-Dimensional Topological Dirac Semimetal

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy