Abstract:Isolating spectral signatures and/or the carrier dynamics that are specific to semiconductor junctions and not just the interface or bulk is challenging. Junctions that form between a semiconductor surface and a contacting layer are the key to their function. Equilibration of chemical potential at such junctions creates an internal electric field and establishes a region where mobile charges are driven away (depletion region). Absorption of light produces electrons and holes within the depletion region where the charges are separated. We developed transient photoreflectance (TPR) as an innovative time-resolved spectroscopic probe that can directly monitor carrier dynamics within and across such junctions. In the TPR method, the change in reflectance (ΔR) of a broadband probe from a specific interface is monitored as a function of pump-probe delay. The spectral nature of the reflected beam provides quantitative information about the built-in field; thus, TPR is a non-contact probe of the electric field at that interface. We applied TPR to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) and n-type gallium-arsenide (n-GaAs) interfaces. We monitored the formation and decay of transient electric fields that form upon photoexcitation within bare p-GaInP2, p-GaInP2/platinum (Pt), and p-GaInP2/amorphous titania (TiO2) interfaces. A field at both the p-GaInP2/Pt and p-GaInP2/TiO2 interfaces forms that drives charge separation, however, recombination at the p-GaInP2/TiO2 interface is significantly reduced compared the p-GaInP2/Pt interface. On the other hand, n-GaAs forms an ohmic contact with TiO2 while only a small field forms at the n- GaAs/NiO interface that promotes hole transfer to nickel oxide (NiO).

Aloof electron probing of in-plane SPV charge distributions on GaAs surfaces

Reverse Surface Photovoltaic Effects in GaAs Surface Quantum Wells

Angle-Dependent Differential-Photovoltage Spectroscopy For The Characterization Of A Gaas/Gaalas Based Vertical-Cavity Surface-Emitting Laser Structure

Synchrotron-radiation-induced Surface Photovoltage on GaAs Studied by Contact-Potential-difference Measurements.

Surface Photovoltage and Band Bending at Metal Gaas Interfaces - A Contact Potential Difference and Photoemission Spectroscopy Study

Synchrotron radiation induced surface photovoltage at metal/GaAs interfaces

Probing the potential landscape inside a two-dimensional electron-gas

Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications

Imaging Spatial Distributions of Laser-Induced Charge and Spin in GaAs∕AlGaAs Two-Dimensional Electron Gas by Pump-Probe Second Harmonic Generation

Kelvin Probe and Synchrotron Radiation Study of Surface Photovoltage and Band Bending at Metal/gaas (100) Interfaces

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

Application of High Spatial Resolution Scanning Work Function Spectroscopy to Semiconductor Surfaces and Interfaces

Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Probing Semiconductor Interfacial Carrier Dynamics Through Time-Resolving the Photo-Induced Electric Fields (conference Presentation)

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Quantized charge transport driven by a surface acoustic wave in induced unipolar and bipolar junctions

Strong field processes inside gallium arsenide

Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces

Anomalous Linear Photogalvanic Effect Observed in A Gan-Based Two-Dimensional Electron Gas