FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si

I. M. Chernev,A. S. Gouralnik,E. Yu. Subbotin,K. N. Galkin,O. V. Kropachev,D. L. Goroshko,O. A. Goroshko,A. V. Gerasimenko,O. E. Lisenkov,N. G. Galkin

DOI: https://doi.org/10.1134/s1062873823705718

2024-03-09

Bulletin of the Russian Academy of Sciences Physics

Abstract:Mg 2 Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi 2 were grown as cover layers on Mg 2 Si by codeposition of Fe/Si or Cr/Si. In comparison with bare Mg 2 Si/Si film, the measured transparency losses in 0.1–1.1 eV range are ∼17–25 and 10–35% for the samples with the FeSi and CrSi 2 layers, respectively. The measured at room temperature resistivity is ∼0.24 mΩ cm for FeSi and 1.7 mΩ cm for CrSi 2 . The photoresponse of structures FeSi/Mg 2 Si/Si and CrSi 2 /Mg 2 Si/Si illuminated with the light filtered by a silicon plate demonstrate the spectral sensitivity in the range 980–1200 nm and peak intensity ∼255 and ∼620 μA/W respectively.