Systematic derivation of a rotationally covariant extension of the 2-dimensional Newell-Whitehead-Segel equation

Robert Graham

DOI: https://doi.org/10.1103/PhysRevLett.76.2185

1996-03-14

Abstract:An extension of the Newell-Whitehead-Segel amplitude equation covariant under abritrary rotations is derived systematically by the renormalization group method.

Pattern Formation and Solitons

What problem does this paper attempt to address?

ab inito local vibrational modes of light impurities in silicon

J.M. Pruneda,S.K. Estreicher,J. Junquera,J. Ferrer,P. Ordejon

DOI: https://doi.org/10.1103/PhysRevB.65.075210

2001-09-18

Abstract:We have developed a formulation of density functional perturbation theory for the calculation of vibrational frequencies in molecules and solids, which uses numerical atomic orbitals as a basis set for the electronic states. The (harmonic) dynamical matrix is extracted directly from the first order change in the density matrix with respect to infinitesimal atomic displacements from the equilibrium configuration. We have applied this method to study the vibrational properties of a number of hydrogen-related complexes and light impurities in silicon. The diagonalization of the dynamical matrix provides the vibrational modes and frequencies, including the local vibrational modes (LVMs) associated with the defects. In addition to tests on simple molecules, results for interstitial hydrogen, hydrogen dimers, vacancy-hydrogen and self-interstitial-hydrogen complexes, the boron-hydrogen pair, substitutional C, and several O-related defects in c-Si are presented. The average error relative to experiment for the aprox.60 predicted LVMs is about 2% with most highly harmonic modes being extremely close and the more anharmonic ones within 5-6% of the measured values.

Materials Science
A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

F. Sahtout Karoui,A. Karoui

DOI: https://doi.org/10.1063/1.3387912

IF: 2.877

2010-08-01

Journal of Applied Physics

Abstract:The atomic structure, energy, stability, vibrational spectra, and infrared absorption intensities of major intrinsic nitrogen-related defects in nitrogen doped silicon crystals have been investigated using ab initio density functional theory and semi-empirical quantum mechanics methods. The defects that are of interest are nitrogen-vacancy-oxygen complexes which are believed to affect oxygen precipitation and void formation as well as nitrogen concentration measurement in nitrogen-doped silicon. Several chemical reactions involving nitrogen, Si vacancies and oxygen interstitial have been studied. After relaxation, the local vibrational modes of each complex are calculated within the harmonic oscillator approximation and the infrared absorption intensities are evaluated from the dipole moment derivatives. By cross correlating the stability and the infrared active lines of the defect, and taking into consideration the symmetry group of each complex, we were able to emphasize which nitrogen related complexes are likely to control the oxygen precipitation and voids formation and to assert a new calibration relationship for nitrogen concentration measurement in nitrogen doped Czochralski and float zone silicon wafers.

physics, applied
Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

HQ XU

DOI: https://doi.org/10.1103/physrevb.46.1403

IF: 3.7

1992-01-01

Physical Review B

Abstract:We report self-consistent calculations for the electronic structure of four complex defects, namely the monohydrogen-vacancy (VH), dihydrogen-vacancy (VH2), trihydrogen-vacancy (VH3), and quadrihydrogen-vacanCY (VH4) complexes, in crystalline silicon. The calculations are based on a semiempirical tight-binding theory. Each of the defects is described by a large repeated supercell. To overcome the difficulties in the treatment of large Hamiltonian matrices, we use the recursion method for computing the local densities of states and the localization of the defect states. We have also calculated numerically the wave functions of the fundamental gap states, which are, in turn, used to derive the hyperfine interaction parameters arising from the paramagnetic spin of the wave functions of the gap states for the complex defects. We have found that, in the VH4 defect, the electrical activity is passivated by four hydrogen atoms, in agreement with early theoretical studies. For the defects VH, VH2, and VH3, we have found that the electrical activity is only partially passivated. We show that the nonhydrogenated silicon dangling orbitals are responsible for the remaining electrical activity. We also demonstrate that the Si-H bonding and antibonding states interact very weakly with the silicon dangling-bond states. Models accounting for the electronic structure of the four defects are presented. The effects of the symmetry-conserved distortions and the Jahn-Teller distortions on the electronic structure of the defects are examined. The calculations have been done in detail for the experimentally well-studied VH2 defect. The results of these calculations agree well with recent experimental studies on this defect.
First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Marianne Etzelmüller Bathen,Lasse Vines,José Coutinho

DOI: https://doi.org/10.1088/1361-648X/abc804

2020-02-17

Abstract:Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (V Si) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of V Si involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement.
Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues

W. Wu,P. T. Greenland,A. J. Fisher,Nguyen H Le,S. Chick,B. N. Murdin

DOI: https://doi.org/10.1103/PhysRevB.97.035205

2017-10-05

Abstract:Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitations of lines of defects within a single-valley spherical band approximation, thus mapping the problem to a scaled hydrogen atom array. A series of detailed full configuration-interaction and time-dependent hybrid density-functional theory calculations have been performed to understand linear clusters of up to 10 donors. Our studies illustrate the generic features of their excited states, addressing the competition between formation of inter-donor ionic states and intra-donor atomic excited states. At short inter-donor distances, excited states of donor molecules are dominant, at intermediate distances ionic states play an important role, and at long distances the intra-donor excitations are predominant as expected. The calculations presented here emphasise the importance of correlations between donor electrons, and are thus complementary to other recent approaches that include effective mass anisotropy and multi-valley effects. The exchange splittings between relevant excited states have also been estimated for a donor pair and for a three-donor arrays; the splittings are much larger than those in the ground state in the range of donor separations between 10 and 20 nm. This establishes a solid theoretical basis for the use of excited-state exchange interactions for controllable quantum gate operations in silicon.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons,Atomic and Molecular Clusters,Optics
Theoretical Calculations of Hyperfine Interactions of the Jahn-Teller Distorted Single Vacancy in Silicon

YQ JIA,GG QIN

DOI: https://doi.org/10.1103/physrevb.37.2605

1988-01-01

Abstract:An attempt is made to extend the theories of Hjalmarson et al. and Ren et al. for a substitutional defect in an unrelaxed ${\mathrm{sp}}^{3}$-bonded semiconductor to calculate the wave functions of electrons localized near the Jahn-Teller distorted single vacancies (positively charged vacancy ${V}^{+}$ and negatively charged vacancy ${V}^{\mathrm{\ensuremath{-}}}$) in Si. The extent of the defect potential is firstly localized at the vacancy site in the central-cell potential approximation and then is extended to the nearest-neighbor sites considering both diagonal and off-diagonal matrix elements of the defect potential. From the calculated wave functions the hyperfine interactions of the electrons with $^{29}\mathrm{Si}$ nuclei around the single vacancies (${V}^{+}$ and ${V}^{\mathrm{\ensuremath{-}}}$) are obtained to compare with those determined experimentally by electron paramagnetic resonance or electron-nuclear double resonance. Good agreements are obtained for the nearest-neighbor atoms of both ${V}^{+}$ and ${V}^{\mathrm{\ensuremath{-}}}$ with the central-cell potential and closer agreements with the extended potential.
First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Joel Davidsson,Viktor Ivády,Rickard Armiento,N T Son,Adam Gali,Igor A Abrikosov

DOI: https://doi.org/10.1088/1367-2630/aaa752

2018-02-15

New Journal of Physics

Abstract:Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. Detailed understanding of the properties of candidate defects is essential for these applications, and requires the identification of the defects microscopic configuration and electronic structure. In multi-component semiconductors point defects often exhibit several non-equivalent configurations of similar but different characteristics. The most relevant example of such point defect is the divacancy in silicon carbide, where some of the non-equivalent configurations implement room temperature qubits. Here, we identify four different configurations of the divacancy in 4H–SiC via the comparison of experimental measurements and results of first-principle calculations. In order to accomplish this challenging task, we carry out an exhaustive numerical accuracy investigation of zero-phonon line and hyperfine coupling parameter calculations. Based on these results, we discuss the possibility of systematic quantum bit search.

physics, multidisciplinary
Comparative chemistry of diffuse clouds III: sulfur-bearing molecules

R. Lucas,H.S. Liszt

DOI: https://doi.org/10.1051/0004-6361%3A20020043

2002-01-11

Abstract:Using data from IRAM's Plateau de Bure Interferometer and 30 m Telescope, we discuss the mm-wave absorption lines of CS, SO, H2S and HCS+ which arise in diffuse clouds occulting several extragalactic continuum sources. Typical relative abundances are X(CS)/X(HCO+) ~ 2, X(CS)/X(SO) ~ 2, X(CS)/X(H2S) ~ 6 and X(CS)/X(HCS+) ~ 13.

Astrophysics
First Principles Investigations on the Carbon-Related Defects in Silicon

Zhongyan Ouyang,Xiaodong Xu,Chengrui Che,Gewei Zhang,Tao Ying,Weiqi Li,Jianqun Yang,Xingji Li

DOI: https://doi.org/10.1002/pssb.202400254

2024-01-01

Abstract:Defect identification for unintentionally induced defects and radiation-implemented defects always attracts great attention in semiconductor materials. Recent advances in carbon-implemented single-photon emitters in silicon urgently require the accurate identification of defect structures to reveal transition mechanisms. Using hybrid functional with finite size correction, we investigate the charge and optical transitions of carbon-related defects, including CSiCSi, VSiCSi, CSi, SiiCSiCSi, and Ci. Except for Ci, other defects present the negative-U feature in the charge transition process. CSiCSi and VSiCSi tend to perform p-type conductivity with the electron capture transition close to the valence band, of which transition level epsilon (0/-1) is 0.30 eV for CSiCSi and epsilon (+1/-2) is 0.34 eV for VSiCSi. CSi and SiiCSiCSi present a bipolar doping character, and CSi tends to capture holes with transition epsilon (0/+2) = 0.10 eV. The optical transitions that typically emit or absorb light in the telecom optical wavelength bands are identified in these defects in terms of band edge recombination. The zero-phonon lines of optical transitions of epsilon (+2/+1) for VSiCSi and Ci are consistent with a previous experiment involving single-photon emitters. The findings are helpful to understand the performance degradation of silicon devices and provide a reference for identifying the structure of carbon-related defects in silicon. This study investigates carbon-related defects in silicon using hybrid functional theory with finite size correction. The research explores charge and optical transitions of defects including CSiCSi, VSiCSi, CSi, Ci, and SiiCSiCSi. Optical transitions of these defects occur in telecommunication wavelength bands, validating previous experiments. The study provides insights for detecting defects in silicon.image (c) 2024 WILEY-VCH GmbH
Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Xingxu Yan,Chengyan Liu,Chaitanya Gadre,Lei Gu,Toshihiro Aoki,Tracy Lovejoy,Niklas Dellby,Ondrej Krivanek,Ruqian Wu,Xiaoqing Pan

DOI: https://doi.org/10.1017/s1431927621004487

IF: 4.0991

2021-01-01

Microscopy and Microanalysis

Abstract:Combined with aberration-corrected scanning transmission electron microscopy (STEM) imaging, the state-of-the-art monochromated electron energy-loss spectroscopy (EELS) is capable of detecting vibrational spectra for a variety of materials with an attainable energy resolution less than 10 meV and sub-nanometer resolution [1, 2]. Additionally, by varying the convergence semi-angle ( α ) and EELS collection geometry, momentum resolution is achieved, enabling angle-resolved vibrational spectroscopy that maps out the phonon dispersion relations [3]. Balancing these three aspects: spatial, energy, and momentum resolutions, we can obtain a powerful space- and angle-resolved vibrational spectroscopy to investigate local phonon modes near the crystalline defects in semiconductors and their heterostructures [4]. Planar defects such as stacking faults and interfaces are believed to impede phonon propagation and modify the vibrational structure [5]. However, the experimental evidence of phonon-defect interactions is fundamentally elusive from either thermal conductivity measurements or optical spectroscopies due to their insufficient spatial resolution. Here we show two cases to demonstrate how to utilize the high spatial, energy, and momentum resolution capabilities of monochromated EELS to reveal the local defect phonon modes at (1) a stacking fault in cubic silicon carbide and (2) an interface in a Si–Ge
Theoretical polarization of zero phonon lines in point defects

Joel Davidsson

DOI: https://doi.org/10.1088/1361-648X/ab94f4

2020-02-27

Abstract:In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a method for calculating these properties and show the importance of using wave functions from both the ground and excited state. The validity of this method is demonstrated on the divacancy in 4H-SiC. Here, the calculated polarization and lifetimes are in excellent agreement with experimental measurements. In general, this method can help to identify point defects and estimate suitable applications.

Materials Science
A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

Shanawer Niaz,Aristides D. Zdetsis

DOI: https://doi.org/10.48550/arXiv.1603.06702

2016-03-22

Abstract:We present a comprehensive and integrated model-independent ab initio study of the structural, cohesive, electronic, and optical properties of silicon quantum dots of various morphologies and sizes in the framework of all-electron static and time-dependent density functional theory (DFT, TDFT), using the well-tested B3LYP and other properly chosen functional(s). Our raw ab initio results for all these properties for hydrogen passivated nanocrystals of various growth models and sizes from 1 to 32 Angstroms, are subsequently fitted, using power-law dependence with judicially selected exponents, based on dimensional and other plausibility arguments. As a result, we can reproduce with excellent accuracy not only known experimental and well-tested theoretical results in the regions of overlap, but we can also extrapolate successfully all the way to infinity, reproducing the band gap of crystalline silicon with almost chemical accuracy as well as the cohesive energy of the infinite crystal with very good accuracy. Thus, our results could be safely used, among others, as interpolation and extrapolation formulas not only for cohesive energy and band gap, but also for interrelated properties, such as dielectric constant and index of refraction of silicon nanocrystals of various sizes all the way up to infinity.

Mesoscale and Nanoscale Physics
Calculation of Defects in Silicon by a New Tight-Binding Model

M Pei,W Wang,BC Pan,YP Li

DOI: https://doi.org/10.1088/0256-307x/17/3/021

2000-01-01

Chinese Physics Letters

Abstract:The structural and electronic properties of monovacancy, divacancy defects within crystalline silicon have been investigated systematically using a new tight-binding model with a 216-atom supercell. The formation energies and energy levels of all the defect configurations are carefully calculated. The results show that atoms nearer to the defects naturally contribute to gap states more, and are comparable with the experimental values.
Optical Properties of Defects in Solids via Quantum Embedding with Good Active Space Orbitals

Bryan T. G. Lau,Brian Busemeyer,Timothy C. Berkelbach

DOI: https://doi.org/10.1021/acs.jpcc.3c08185

2024-02-13

The Journal of Physical Chemistry C

Abstract:The study of isolated defects in solids is a natural target for classical or quantum embedding methods that treat the defect at a high level of theory and the rest of the solid at a lower level of theory. Here, in the context of active-space-based quantum embeddings, we study the performance of three active-space orbital selection schemes based on canonical (energy-ordered) orbitals, local orbitals defined in the spirit of density matrix embedding theory, and approximate natural transition orbitals. Using equation-of-motion coupled-cluster theory with single and double excitations (CCSD), we apply these active space selection schemes to the calculation of the vertical singlet excitation energy of a substitutional carbon dimer defect in hexagonal boron nitride, an oxygen vacancy in magnesium oxide, and a carbon vacancy in diamond. Especially when used in combination with a simple composite correction, we find that the best performing schemes can predict the excitation energy to about 0.1–0.2 eV of its converged value using only a few hundred orbitals, even when the full supercell has thousands of orbitals, which amounts to many-orders-of-magnitude computational savings when using correlated electronic structure theories. When compared to assigned experimental spectra and accounting for vibrational corrections, we find that CCSD predicts excitation energies that are accurate to about 0.1–0.3 eV, which is comparable to its performance in molecules and bulk solids.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
Revealing the Geometrical and Vibrational Properties of the Defects Driving the Boson Peak

Shivam Mahajan,Darryl Seow Yang Han,Cunyuan Jiang,Matteo Baggioli,Massimo Pica Ciamarra

2024-09-20

Abstract:The vibrational density of states is key to understanding the mechanical, thermal, and transport properties of materials. In amorphous solids, this density shows an excess of vibrational modes compared to the Debye model, known as the boson peak, whose origin remains poorly understood. Previous studies have suggested a link between the boson peak and quasi-localized nonphononic vibrations, or "defects." However, it has been difficult to clearly identify these defects, possibly because they hybridize with extended phonons, casting doubt on their existence and connection to the boson peak. In this work, we introduce a simple and practical method for separating hybridized phonons from localized vibrations. We show that phonons at the boson peak frequency hybridize with localized defects. These defects are anisotropic, compact, and exhibit oscillatory pure shear deformations. Their density correlates with the excess of vibrational modes at the boson peak frequency across various two- and three-dimensional systems, confirming that they are the microscopic origin of the boson peak.

Soft Condensed Matter
Defects in SiC for Quantum Computing

Choudhary Renu,Biswas Rana,Pan Bicai,Paudyal Durga

DOI: https://doi.org/10.1557/adv.2019.301

2019-01-01

MRS Advances

Abstract:Many novel materials are being actively considered for quantum information science and for realizing high-performance qubit operation at room temperature. It is known that deep defects in wide-band gap semiconductors can have spin states and long coherence times suitable for qubit operation. We theoretically investigate from ab-initio density functional theory (DFT) that the defect states in the hexagonal silicon carbide (4H-SiC) are potential qubit materials. The DFT supercell calculations were performed with the local-orbital and pseudopotential methods including hybrid exchange-correlation functionals. Di-vacancies in SiC supercells yielded defect levels in the gap consisting of closely spaced doublet just above the valence band edge, and higher levels in the band gap. The divacancy with a spin state of 1 is charge neutral. The divacancy is characterized by C-dangling bonds and a Si-dangling bonds. Jahnteller distortions and formation energies as a function of the Fermi level and single photon interactions with these defect levels will be discussed. In contrast, the anti-site defects where C, Si are interchanged have high formation energies of 5.4 eV and have just a single shallow defect level close to the valence band edge, with no spin. We will compare results including the defect levels from both the electronic structure approaches.
Strain Engineering for Transition Metal Defects in SiC

Benedikt Tissot,Péter Udvarhelyi,Adam Gali,Guido Burkard

2023-10-31

Abstract:Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.

Mesoscale and Nanoscale Physics
Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Cheng-Wei Lee,Meenakshi Singh,Adele Tamboli,Vladan Stevanović

DOI: https://doi.org/10.1038/s41524-022-00862-z

2022-08-20

Abstract:Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3$d$ series that considers generalized Koopmans' condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet-triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications.

Materials Science,Quantum Physics
Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Pei Yao,Yu Song,Xu Zuo

DOI: https://doi.org/10.1016/j.spmi.2021.106962

IF: 3.22

2021-01-01

Superlattices and Microstructures

Abstract:It is a consensus that hydrogen is the essential mobile impurity associated with the degeneration of silicon devices in ionization radiation. Specifically, it is proton that extends interfacial defects in SiO2/Si interface. In this work, the proton diffusion and the induced defects in the amorphousSiO2/Si (a-SiO2/Si) interface are simulated at multi-scales. The diffusion activation energy and pre-exponential factor are obtained by fitting the Arrhenius law, and the interfacial defects associated with the proton diffusion are identified from the diffusion trajectories. Moreover, the pathways and barriers of proton migration in the a-SiO2/Si interface are calculated by the climbing image nudged elastic band (CI-NEB) method, which indicates a potential barrier of 0.2-0.6 eV for a proton to migrate between the bridging O atoms. Further by comparing the energy barrier profiles in the lateral and perpendicular directions, it is suggested that the proton diffusion is anisotropic in the a-SiO2/Si interface. A proton is more likely to migrate laterally in the first few Si layers beneath the interface, rather than crossing over the interface, and it may be trapped in the latter process due to the unevenly distributed strain in a-SiO2/Si interface.
Semiempirical Electronic-Structure Calculations of Hydrogen-Phosphorus-Vacancy Complexes in Crystalline Silicon

HQ XU

DOI: https://doi.org/10.1088/0953-8984/5/7/007

1993-01-01

Abstract:We report on self-consistent calculations for the electronic structure of three hydrogen-phosphorus-vacancy complexes in crystalline silicon, based on a semiempirical tight-binding theory. These complexes, denoted by V-1H-3P, V-2H-2P, and V-3H-1P, consist of a vacancy and substitutional phosphorus impurities on the nearest-neighbour sites of the vacancy. The remaining silicon dangling bonds in the complexes are all saturated by hydrogen atoms. Each of the complexes is described by a large repeated supercell and we use the recursion method for computing local densities of states and orbital electron occupancies. We find that the three complexes do not introduce energy levels into the fundamental band gap, revealing that the electrical activity of the silicon dangling bonds can be well passivated by hydrogen atoms at bonding positions through strong orbital interactions and by phosphorus atoms at substitutional positions through Coulomb attractions. However, the complexes can have defect resonant states outside of the band gap. We show that these resonant states can be well described in terms of the symmetric combinations of the phosphorus orbitals and the symmetric combinations of the hydrogen and the hydrogen-saturated silicon orbitals.

Systematic derivation of a rotationally covariant extension of the 2-dimensional Newell-Whitehead-Segel equation

ab inito local vibrational modes of light impurities in silicon

A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues

Theoretical Calculations of Hyperfine Interactions of the Jahn-Teller Distorted Single Vacancy in Silicon

First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

Comparative chemistry of diffuse clouds III: sulfur-bearing molecules

First Principles Investigations on the Carbon-Related Defects in Silicon

Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Theoretical polarization of zero phonon lines in point defects

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

Calculation of Defects in Silicon by a New Tight-Binding Model

Optical Properties of Defects in Solids via Quantum Embedding with Good Active Space Orbitals

Revealing the Geometrical and Vibrational Properties of the Defects Driving the Boson Peak

Defects in SiC for Quantum Computing

Strain Engineering for Transition Metal Defects in SiC

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Semiempirical Electronic-Structure Calculations of Hydrogen-Phosphorus-Vacancy Complexes in Crystalline Silicon