Abstract:Sub‐millimeter scale (>700 μm) tri‐layer WSe2 with high quality and uniformity is robustly deposited and integrated with 2D photosensitive channels for gate‐tunable photodetection. The WSe2 not only serves as a substrate passivation layer to mitigate the detrimental substrate effects, but also introduces vertical built‐in fields, which efficiently separates the photogenerated carriers and produces high photoconductive gain. 2D semiconductors are regarded as the potential channel materials for high‐performance integrated optoelectronics. However, the absence of an effective photoconductive gain mechanism and the adverse effects from traditional SiO2 substrate prevent the further breakthrough of the photosensitivity of 2D semiconductors‐based photodetectors. Here, an ingenious out‐of‐plane heterostructure is proposed for boosting the photosensitivity. Sub‐millimeter scale (>700 μm) tri‐layer WSe2 with high quality and uniformity is robustly deposited and integrated with 2D photosensitive channels for gate‐tunable photodetection. The WSe2 with naturally passivated surface can not only serve as a substrate passivation layer to mitigate the detrimental substrate effects, but also introduces vertical built‐in fields, which efficiently separates the photogenerated carriers and produces high photoconductive gain. Under gate voltage modulation, the proposed InSe photodetector exhibits a series of excellent performances, including responsivity of 112 A W−1, detectivity of 8.6 × 1012 Jones, light on/off ratio of 1.3 × 104 and rise/decay time of 29.1/15.3 ms. More inspiringly, this heterostructure scheme is universally applicable to 2D WS2 photodetector and also significantly improves its photosensitivity, demonstrating broad applicability. This research will provide helpful guidance for the design and optimization of customizable optoelectronic devices based on 2D semiconductors.

Achieving a Noise Limit with a Few-layer WSe 2 Avalanche Photodetector at Room Temperature

Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

Hybrid WSe 2 -In 2 O 3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 μm Wavelength Detection

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

Room-temperature Low-Threshold Avalanche Effect in Stepwise Van-Der-waals Homojunction Photodiodes

High-Performance Long-wave Infrared Photodetector Based on WSe2/PdSe2 Broken-Gap Heterodiode

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

Broadband, Gate-Tunable, and Low-Energy-Consumption Avalanche Photodetector Based on WS2/Ge Heterostructure

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

Robust Deposition of Sub‐Millimeter WSe2 Drive Ultrasensitive Gate‐Tunable 2D Material Photodetectors

Sm, Pt asymmetric n- and p-type contacts in WSe2 phototransistor for high-performance broadband photodetection

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2

Si-CMOS-compatible 2D PtSe2-based Self-Driven Photodetector with Ultrahigh Responsivity and Specific Detectivity