Abstract:With the rapid development of renewable energy and semiconductor industries, the preparation of high-quality polysilicon has received more and more attention. Chemical vapor deposition (CVD) is one of the most important methods for high-quality polysilicon fabrication. In this paper, density-functional theory (DFT) is employed to investigate the effect of surface heteroatoms on the growth of polysilicon prepared by CVD. The dissociation activation energy of silane and the migration energy barrier of surface silicon atoms are calculated on three types of silicon (111) surfaces, including a clean silicon surface, a silicon surface with oxygen, and a silicon surface with hydrogen. The calculation results reveal that the activation energy of silane dissociation on the clean silicon surface is 1.71 eV, higher than 1.04 eV on oxidized silicon surfaces and similar to 1.74 eV on silicon surfaces with hydrogen. Therefore, on a partially oxidized silicon substrate silicon deposition would preferentially occur in the oxidized region. On a hydrogenated silicon substrate, silicon deposition would uniformly take place over the entire surface. Furthermore, surface migration barriers of silicon atoms are calculated, with values of 0.27 0.24, and 0.05 eV on clean, oxidized, and hydrogenated surfaces, respectively. The lower migration barriers on the hydrogenated substrate indicate more uniform silicon deposition. Subsequently, this finding is confirmed by experimental evidence. This study provides a theoretical basis for the preparation of high-quality polysilicon and serves as valuable operational guidance for industry-level production of uniform and dense polysilicon rods.

Engineering Optimization of Producing High-Purity Dichlorosilane in a Fixed-Bed Reactor by Trichlorosilane Decomposition

Conversion of Methyltrichlorosilane in Stirred Bed Reactor by Methylalumminumchloride Method

Development of Comprehensive Utilization by Redistribution and Convertion of Methyltrichlorosilane

Study on Redistribution of Methyltrichlorosilane and Low-boiling Residues Using Activated Carbon Supported AlCl3 Catalysts

Exploration of photocatalytic chlorination combined simplified distillation to produce electronic grade high-purity trichlorosilane via microchannel reactor experiments, multiphase-flow simulation, ReaxFF MD, and DFT

Study on Redistribution of Methyltrichlorosilane and Trimethylchlorosilane over AlCl3 Supported Catalyst

Reactive Distillation-Aided Ultrapure Silane Production from Trichlorosilane: Process Simulation and Optimization

Multi-scale simulations of fluidized bed reactor for synthesis of methylchlorosilane

Photocatalytic reactive distillation - A novel process intensification approach for purification of electronic-grade silicon tetrachloride

Catalytic Disproportionation of Trimethoxysilane to Monosilane: Studies on Catalyst, Kinetics and Reactor Modeling

A Hot-Wall Tubular Reactor for Silane Pyrolysis: Modeling and Simulation

Numerical Analysis of the Chemical Vapor Deposition of Polysilicon in a Trichlorosilane and Hydrogen System

Experimental Study of Direct Synthesis Process of Methyl Chlorosilane in Fluidized Bed Reactor

Fluidized Bed Reactors for Solar-Grade Silicon and Silane Production

Silane Pyrolysis to Silicon Rod in A Bell-Jar Reactor at High Temperature and Pressure: Modeling and Simulation

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Influence of Silicon Size Distribution on Hydrochlorination Process of Solar-grade Silicon in Spouted Reactor via MP-PIC Approach

CFD-Aided Design for Polysilicon Production System

First-Principles Study of the Effect of Surface Heteroatoms on Silane Dissociation

Thermodynamic analysis and process optimization of organosilicon distillation systems

Development of a polysilicon chemical vapor deposition reactor using the computational fluid dynamics method