High-performance and Low-Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction
Xinming Zhuang,Joon-Seok Kim,Wei Huang,Yao Chen,Gang Wang,Jianhua Chen,Yao,Zhi Wang,Fengjing Liu,Junsheng Yu,Yuhua Cheng,Zaixing Yang,Lincoln J. Lauhon,Tobin J. Marks,Antonio Facchetti
DOI: https://doi.org/10.1073/pnas.2216672120
IF: 11.1
2023-01-01
Proceedings of the National Academy of Sciences
Abstract:Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.