Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

High-performance and Low-Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction

Flexible Low-Power Source-Gated Transistors With Solution-Processed Metal-Oxide Semiconductors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication

Subthreshold Schottky-Barrier Thin-Film Transistors with Ultralow Power and High Intrinsic Gain

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

Low-Voltage Polymer Monolayer Transistors for High-Gain Unipolar and Complementary Logic Inverters

Printed Subthreshold Organic Transistors Operating at High Gain and Ultralow Power

High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications

Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy

A Dual-Gate IGZO Source-Gated Transistor Based on Field Modulation by TCAD Simulation

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Ultralow-Power All-Inkjet-Printed Organic Thin-Film Transistors for Wearables

Sub-thermionic, ultra-high-gain organic transistors and circuits

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Ultrahigh-gain organic transistors based on van der Waals metal-barrier interlayer-semiconductor junction

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay