Abstract:Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1–14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation. These manifestations demonstrate possible uses of steady-state negative capacitance—for example, enhancing the capacitance of a ferroelectric–dielectric heterostructure4,7,14 or improving the subthreshold swing of a transistor8–12. Yet they constitute only indirect measurements of the local state of negative capacitance in which the ferroelectric resides. Spatial mapping of this phenomenon would help its understanding at a microscopic scale and also help to achieve optimal design of devices with potential technological applications. Here we demonstrate a direct measurement of steady-state negative capacitance in a ferroelectric–dielectric heterostructure. We use electron microscopy complemented by phase-field and first-principles-based (second-principles) simulations in SrTiO3/PbTiO3 superlattices to directly determine, with atomic resolution, the local regions in the ferroelectric material where a state of negative capacitance is stabilized. Simultaneous vector mapping of atomic displacements (related to a complex pattern in the polarization field), in conjunction with reconstruction of the local electric field, identify the negative capacitance regions as those with higher energy density and larger polarizability: the domain walls where the polarization is suppressed.

Negative Capacitance and Dielectric Constant of Nanocomposite SiAl z O x N y (Si) Films with Semiconductor Nanoparticles

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Frequency dependent negative capacitance of (Ba0.6Sr0.4)(ZrxTi1-x)O3 thin films grown on La0.9Sr1.1NiO4 buffered SrTiO3 substrate

Electric and Dielectric Characteristics of Al/ZrO2/IL/n-Si MOS Capacitors Using Three-Frequency Correction Method

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

Observation of Stabilized Negative Capacitance Effect in Hafnium-Based Ferroic Films

Spatially resolved steady-state negative capacitance

Dielectric Properties of AlN Film on Si Substrate

Memory and Negative Photoconductivity Effects of Ge Nanocrystals Embedded in ZrO2/Al2O3 Gate Dielectrics

Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Dielectric behavior and negative capacitance in multidomain ferroelectric/dielectric superlattices

The origin of negative charging in amorphous Al$_2$O$_3$ films: The role of native defects

Epsilon-near-zero response derived from collective oscillation in the metacomposites with ultralow plasma frequency

The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures