Electrochemical characterization of localized corrosion mechanism of ALD Al 2 O 3 -coated copper for microelectronic application

Romain Haeffele,Sabrina Marcelin,Lucile Broussous,Lucie Mazet,Bernard Normand
DOI: https://doi.org/10.1016/j.corsci.2024.112135
IF: 7.72
2024-05-16
Corrosion Science
Abstract:To achieve performance and reliability in microelectronics devices, copper interconnections must be protected from aggressive environment during the manufacturing process and throughout the life of the devices. Atomic Layer Deposition Al 2 O 3 thin films has been used as a compatible layer with key integration process steps, as well as being corrosion-resistant in neutral media. However, electrochemical tests in aggressive environment have revealed that the alumina prematurely failed to protect copper from localized corrosion. In this study, local and global electrochemical techniques have been employed to evaluate the reactivity of copper at multiple scales and to elucidate the underlying corrosion mechanisms.
materials science, multidisciplinary,metallurgy & metallurgical engineering
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