Plasmonic titanium nitride via atomic layer deposition: A low-temperature route

Dhruv Fomra,Ray Secondo,Kai Ding,Vitaliy Avrutin,Natalia Izyumskaya,Ümit Özgür,Nathaniel Kinsey
DOI: https://doi.org/10.1063/1.5130889
IF: 2.877
2020-03-14
Journal of Applied Physics
Abstract:To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire grown by plasma-enhanced atomic layer deposition. TiN with low losses, high metallicity, and a plasma frequency below 500 nm was achieved at temperatures less than 500 °C by exploring the effects of chemisorption time, substrate temperature, and plasma exposure time on the material properties. A reduction in chemisorption time mitigates premature precursor decomposition at <i>T<sub>S</sub></i> &gt; 375 °C, and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25 s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450 °C, compatible with CMOS processes, with 0.5 s chemisorption time and 25 s plasma exposure exhibited a high plasmonic figure of merit (<span class="equationTd inline-formula"><math> | ε ′ / ε ′ ′ |</math></span>) of 2.8 and resistivity of <span class="equationTd inline-formula"><math> 31 μ Ω cm</math></span>. As a result of the improved quality, subwavelength apertures were fabricated in the TiN thin films and are shown to exhibit extraordinary transmission.
physics, applied
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