Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Arthur F Lipinski,Christopher W Lambert,Achyut Maity,William R Hendren,Paul R Edwards,Robert W Martin,Robert M Bowman

DOI: https://doi.org/10.1021/acsaelm.3c01344

2023-12-13

Abstract:Titanium nitride (TiN) has emerged as a highly promising alternative to traditional plasmonic materials. This study focuses on the inclusion of a Cr90Ru10 buffer layer between the substrate and thin TiN film, which enables the use of cost-effective, amorphous technical substrates while preserving high film quality. We report best-in-class TiN thin films fabricated on fused silica wafers, achieving a maximum plasmonic figure of merit, -ϵ'/ϵ″, of approximately 2.8, even at a modest wafer temperature of around 300 °C. Furthermore, we delve into the characterization of TiN thin film quality and fabricated TiN triangular nanostructures, employing attenuated total reflectance and cathodoluminescence techniques to highlight their potential applications in surface plasmonics.