Improved performance of CsPbBr3 quantum-dot light-emitting diodes by bottom interface modification

Yang-Yang Zhao,Qing-Wen Zhang,Yue-Feng Liu,Chao Lv,Shuang Guo,Xiang-Ping Liu,Yan-Gang Bi,Hong-Wei Li,Yu-Qing Wu
DOI: https://doi.org/10.1016/j.orgel.2022.106620
IF: 3.868
2022-10-01
Organic Electronics
Abstract:We demonstrated a simple approach to improve performance of perovskite quantum-dot-based light-emitting diodes (Pe QLEDs) via introducing poly [(9,9-bis (3'-(N, N- dimethylamino) propyl)-2,7- fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the bottom interface modification layer. PFN modification had the effect of reducing the defects of the CsPbBr3 quantum dots (CsPbBr3 QDs) and the luminance quenching at the CsPbBr3 QDs/poly (3,4-thylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS)/interface. The hole injection barrier between the PEDOT:PSS and CsPbBr3 QDs has been reduced by the bottom interface modification. As a result, the maximum luminance, external quantum efficiency (EQE) and current efficiency for the PFN-modified CsPbBr3 QLEDs were 10,150 cd m−2, 3.25% and 10.2 cd A−1, corresponding to the improvement factors of 98%, 322% and 336%, respectively, improvement compared to those of the devices without the PFN modification.
materials science, multidisciplinary,physics, applied
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