Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

Alagesan Subramanian,Zhenghui Pan,Zhenbo Zhang,Imtiaz Ahmad,Jing Chen,Meinan Liu,Shuang Cheng,Yijun Xu,Jun Wu,Wei Lei,Qasim Khan,Yuegang Zhang
DOI: https://doi.org/10.1021/acsami.8b01684
IF: 9.5
2018-01-01
ACS Applied Materials & Interfaces
Abstract:All-inorganic perovskite light emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve a high performance of the device. Basically, device design, control of energy level alignment and reducing energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to a superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency 2210 cd m-2 and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest value among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium doped-TiO2 compare to undoped TiO2-based device.
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