Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBr x I 3− x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

Xin Zhou,Jibin Zhang,Xuan Tong,Yabing Sun,Haiyan Zhang,Yonggang Min,Yannan Qian

DOI: https://doi.org/10.1002/adom.202101517

IF: 9

2021-11-01

Advanced Optical Materials

Abstract:Although all‐inorganic CsPbBrxI3−x perovskite quantum dots (PeQDs) are increasingly being used as a competitive material for pure red perovskite light‐emitting diodes (PeLEDs), they suffer from low luminescent ability and poor stability. In this study, an In3+‐doped CsPbBrxI3−x PeQD solution exhibits a near‐unity photoluminescence quantum yield (PLQY) of ≈99.8% and superior stability for more than half a year in atmosphere. As far as known, this is the highest PLQY and stability achieved for mixed halide PeQDs. In3+ ion doping not only reduces the surface vacancy defects because of the partial substitution of Pb2+ by the smaller radii of In3+ ions, but also enhances the formation energy of CsPbBrxI3−x PeQDs based on first‐principles calculations. Compared with pristine LEDs based on CsPbBrxI3−x, the pure red PeLEDs based on In3+‐doped CsPbBrxI3−x display a higher luminance of 423 cd m‐2, fivefold external quantum efficiency improvement up to 11.2%, and increased stability, providing a feasible and promising perspective for developing In3+‐doped CsPbBrxI3−x PeQDs applied efficiently in advanced light emitters for solid‐state lighting and displays. An In3+‐doped CsPbBrxI3−x perovskite quantum dot (PeQD) solution exhibits a near‐unity photoluminescence quantum yield of ≈99.8% and superior stability for more than half a year in atmosphere. The pure red perovskite light‐emitting diodes (PeLEDs) based on In3+‐doped CsPbBrxI3−x display a higher luminance of 423 cd m−2, fivefold external quantum efficiency improvement up to 11.2%, and increased stability.

materials science, multidisciplinary,optics