Abstract:An anion exchange process using HBr is developed and used to achieve pure‐red emitting CsPbI3‐xBrx quantum dots, with 1‐dodecanethiol ligands used to suppress halide ion migration. The light‐emitting diodes based on the quantum dos show a stable electroluminescence peak at 637 nm, and a maximum external quantum efficiency of 21.8% with an average value of 20.4%. Perovskite‐based light‐emitting diodes (PeLEDs) with a mixed halide composition can be used to obtain the "pure red" emission, i.e., in the 620–650 nm range, required for high‐definition displays. However, fast halide ion migration induces phase separation in these materials under electric fields, resulting in poor spectral stability and low efficiency. Herein, a method for producing mixed halide CsPbI3‐xBrx quantum dots (QDs) is reported in which ion migration is suppressed. The mixed halide composition is first achieved by anion exchange between CsPbI3 QDs and hydrobromic acid (HBr), during that the bromine ions efficiently passivate the iodine vacancies of the QDs. The original oleic acid ligands are then exchanged for 1‐dodecanethiol (1‐DT), which suppresses halide ion migration via the strong binding of the sulfhydryl group with the QD surface. PeLEDs based on these QDs exhibit a pure‐red electroluminescence (EL) peak at 637 nm, a maximum external quantum efficiency (EQE) of 21.8% with an average value of 20.4%, a peak luminance of 2653 cd m−2, and low EQE decease with increasing luminance. The EL spectrum of these devices is stable even at 6.7 V and they have an EQE half‐life of 70 min at an initial luminance of 150 cd m−2.

Pure Red Emitting Composites with Nearly 100% Solid–state Photoluminescence Quantum Yield Obtained by In-situ Growth Sr2+- doped Hybrid Halides CsPb(Br,I)3 Perovskite Quantum Dots in Mesoporous Silica

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Nucleophilic Reaction‐Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light‐Emitting Diodes with Efficiency Exceeding 26 %

Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBr x I 3− x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

Spectrally Stable and Efficient Pure Red CsPbI3 Quantum Dot Light-Emitting Diodes Enabled by Sequential Ligand Post-Treatment Strategy

Spectrally Stable and Efficient Pure Red CsPbI 3 Quantum Dot Light-Emitting Diodes Enabled by Sequential Ligand Post-Treatment Strategy

Quasi‐2D CsPbBr X I 3− X Composite Thin Films for Efficient and Stable Red Perovskite Light‐Emitting Diodes

Suppressing Ion Migration of Mixed‐Halide Perovskite Quantum Dots for High Efficiency Pure‐Red Light‐Emitting Diodes

Efficient All‐Perovskite White Light‐Emitting Diodes Made of In Situ Grown Perovskite‐Mesoporous Silica Nanocomposites

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Cs4PbBr6/CsPbBr3 Perovskite Composites with Near-Unity Luminescence Quantum Yield: Large-Scale Synthesis, Luminescence and Formation Mechanism, and White Light-Emitting Diode Application.

Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I)3 Quantum Dots for High-Performance Pure-Red PeLEDs

K+-doping-induced Highly Efficient Red Emission in CsPb(Br,I)3 Quantum Dot Glass Toward Rec. 2020 Displays.

Stable and efficient CsPbI3 quantum-dot light-emitting diodes with strong quantum confinement

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Ligand-mediated CsPbBr x I 3− x /SiO 2 quantum dots for red, stable and low-threshold amplify spontaneous emission

Efficient and Stable CF 3 PEAI-Passivated CsPbI 3 QDs toward Red LEDs

Ultra-small α-CsPbI3 perovskite quantum dots with stable, bright and pure red emission for Rec. 2020 display backlights

Synergistic passivation of high stability CsPb(Br/I) 3 perovskite quantum dots with double ligands for WLEDs

Lowing surface steric hindrance of strongly-confined perovskite quantum dots enables efficient pure-red light-emitting diodes

High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots