High-Efficiency Perovskite Light-Emitting Diodes with Improved Interfacial Contact
Ruiying Li,Lei Cai,Yatao Zou,Hao Xu,Yeshu Tan,Yusheng Wang,Junnan Li,Xuechun Wang,Ya Li,Yuanshuai Qin,Dong Liang,Tao Song,Baoquan Sun
DOI: https://doi.org/10.1021/acsami.0c07514
2020-07-07
Abstract:Unbalanced charge injection is one of the major issues that hampers the efficiency of perovskite light-emitting diodes (PeLEDs). Through engineering the device structure with multiple hole transport layers (HTLs), i.e., poly(9,9-dioctyl-fluorene-co-<i>N</i>-(4-butylphenyl)diphenylamine) (TFB)/poly(9-vinylcarbazole) (PVK) and nickel oxide (NiO<i><sub>x</sub></i>)/TFB/PVK, efficient PeLED devices have been successfully demonstrated. However, in a typical solution-processed PeLED with multiple HTLs, the underlying conjugated HTL could be easily redissolved by the ink of the following one, which not only dramatically deteriorates the electrical property of HTLs but also influences the quality of the top perovskite films. In this work, through inserting a thin atomic layer-deposited aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) layer between HTLs and the perovskite layer, an improved interfacial contact can be achieved, which enables us to obtain perovskite films with enhanced characteristics and balanced charge injection in the resultant PeLEDs. In addition, because of the proper refractive index (<i>r</i>), the presence of the Al<sub>2</sub>O<sub>3</sub> layer also favors the light out-coupling of PeLEDs. As a result, we fabricate green PeLEDs with good repeatability and external quantum efficiency of 17.0%, which is approximately 60% higher than that of the control device without Al<sub>2</sub>O<sub>3</sub>. Our work provides a promising avenue to enhance interfacial contact between the charge transport layer and perovskite for efficient perovskite-based optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c07514?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c07514</a>.Surface tension calculation; refractive index and extinct coefficient values of TFB, PVK, Al<sub>2</sub>O<sub>3</sub>, and perovskite over a wide spectral range; SEM images of ITO, ITO/TFB, ITO/TFB/PVK/Al<sub>2</sub>O<sub>3</sub> (<i>n</i> = 30), and ITO/TFB/PVK/Al<sub>2</sub>O<sub>3</sub> (<i>n</i> = 70); CAFM current images and line scans of ITO/TFB/PVK and ITO/TFB/PVK/Al<sub>2</sub>O<sub>3</sub> (<i>n</i> = 50); SEM images of the substrates of ITO/TFB/PVK under the same conditions with different batches; AFM three-dimensional (3D) images of perovskite films deposited on ITO/TFB/PVK/Al<sub>2</sub>O<sub>3</sub> (<i>n</i> = 0, 30, 50, and 70); XRD patterns of perovskite films deposited on ITO/TFB/PVK/Al<sub>2</sub>O<sub>3</sub> (<i>n</i> = 0, 30, 50, and 70); refractive index and extinction coefficient values over a wide spectral range; EL and PL spectra of the device; CIE coordinates of the device; <i>J</i>–<i>L</i>–<i>V</i> curve and EL spectra of blue and red devices; single carrier device structures of the hole-only device and electron-only device; and <i>J</i>–<i>V</i> curves of the electron-only device and hole-only device with different cycle number Al<sub>2</sub>O<sub>3</sub> layers (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c07514/suppl_file/am0c07514_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology