Abstract:All‐inorganic CsPbX3 (X = Cl, Br, I, or mixed halides) perovskite quantum dots (QDs) exhibit tunable optical bandgaps and narrow emission peaks, which have received worldwide interest in the field of both photovoltaics (PVs) and light‐emitting diodes (LEDs). Herein, it is reported a discovery that CsPbI3 perovskite QD solar cell can simultaneously deliver high PV performance and intense electroluminescence. In specific, the multifunctional CsPbI3 QD film is fabricated through a simple yet efficient solid‐state‐ligand exchange process using a tailored organic ligand triphenyl phosphite (TPPI). The function of QD surface manipulation using TPPI here is proven to be twofold, balancing the carrier transport and effectively passivating the QD surface to produce conductive and emissive QD film. The CsPbI3 perovskite QD solar cell delivers a champion efficiency of 15.21% with improved open circuit voltage and high fill factor. Concurrently functioning as a red LED, the CsPbI3 perovskite QD solar cell outputs electric power to light conversion efficiency approaching 4%, a record value for QD electroluminescent PVs. The results here indicate that these versatile perovskite QDs may be a promising candidate for fabricating multifunctional optoelectronic devices. In this study it is reported an electroluminescent solar cell using CsPbI3 quantum dots (QDs) via solid‐state‐ligand exchange process using organic ligand triphenyl phosphite; the device achieves a champion efficiency of 15.21%, and an overall electric power to light conversion efficiency of 3.80% in red light‐emitting diode function, a record value for QD photovoltaics.

Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification.

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Electron Delocalization in CsPbI 3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Perovskite Quantum Dots with Atomic Crystal Shells for Light-Emitting Diodes with Low Efficiency Roll-Off

Passivating Cspbbr X I3- X Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

CsPbBr3/CdS Core/Shell Structure Quantum Dots for Inverted Light-Emitting Diodes Application

Capping Ligand Engineering Enables Stable CsPbBr3 Perovskite Quantum Dots toward White-Light-Emitting Diodes.

PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using P–i–n Structures

Efficient and stable Cyan-emitting CsPbBr3 Quantum Dots with Zinc Bromide Inorganic Passivation

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Green Light-Emitting Devices Based on Perovskite CsPbBr3 Quantum Dots

Interfacial Regulation toward Efficient CsPbBr3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Steady and Transient Optical Properties of CsPbBr3/Pb3(PO4)2 Perovskite Quantum Dots for White Light-Emitting Diodes

Electroluminescent Solar Cells Based on CsPbI 3 Perovskite Quantum Dots

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

Efficient and Stable CF 3 PEAI-Passivated CsPbI 3 QDs toward Red LEDs

Phosphorescent Dye Sensitized Quantum‐Dot Light‐Emitting Diodes with 37% External Quantum Efficiency

Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers

Efficient All‐Perovskite White Light‐Emitting Diodes Made of In Situ Grown Perovskite‐Mesoporous Silica Nanocomposites