Abstract:The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 10 14 –1 × 10 15 cm –2 has been studied. Studies have shown that the smallest degradation of the "saturation" currents of the diffusion current flow mechanism from J 0 d ≤ 5 × 10 –13 to J 0 d ≤ 3 × 10 –12 A/cm 2 and efficiency from 19.2 to 13.6% (AM0, 1367 W/m 2 ) were n -α-Si:H/ c - p (Ga)/ p -α-Si:H and n - c- Si:H/ c - p (Ga)/ p -α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.

Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells