Abstract:We developed a new platform that enables in-situ four-probe electronic measurements, in-situ three-probe field-effect measurements, nanomanipulation, and in-situ modification of nanodevices inside a transmission electron microscope (TEM). The platform includes a specially designed chip-holder and a silicon (Si) chip with suspended metal electrodes. The chip-holder can hold one Si chip with a size up to 3 mm x 3 mm and provides four electrical connections that can be connected to the micrometer-sized electrodes on the Si chip by wire-bonding. The other side of the electrical connections on the chip-holder is connected to the electronic instruments outside the TEM through a commercial Nanofactory SPM-TEM holder. The Si chip with suspended metal electrodes on one of its edges was fabricated by lithography and wet etching. Carbon nanotubes (CNTs), InAs nanowires, and tungsten disulfide nanowires were placed to stride over and connect to the suspended electrodes on the Si chip by nanomanipulations inside a scanning electron microscope (SEM). By using the platform, I-V curves of an individual single-walled CNT connecting to four electrodes were in-situ measured between any two of the four suspended electrodes, and a high-resolution TEM image of the same CNT was obtained. Furthermore, four-terminal I-V measurement on an InAs nanowire was achieved on this platform, and with a movable probe used as a gate electrode, field-effect measurement on the same InAs nanowire device was accomplished in SEM. In addition, by using the movable probe on the SPM-TEM holder, we could further in-situ modify nanomaterial and nanodevices. The present work demonstrates a method that allows a direct correlation between the atomic-level structure and the electronic property of nanomaterials or nanodevices whose structure can be further modified in-situ.

In Situ Device‐Level TEM Characterization Based on Ultra‐Flexible Multilayer MoS2 Micro‐Cantilever (Adv. Mater. 28/2023)

In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever

Optical Micro/nanofibre Embedded Soft Film Enables Multifunctional Flow Sensing in Microfluidic Chips

Fabrication and Characterization of Sio2 Microcantilever for High Sensitive Moisture Sensor

Development of in Situ Optical–electrical MEMS Platform for Semiconductor Characterization

Micromachined SiO 2 microcantilever for high sensitive moisture sensor

Fabrication and characterization of SiO2 microcantilever for microsensor application

Chemical Specificity in Nanomechanical Sensors

A platform for in-situ multi-probe electronic measurements and modification of nanodevices inside a transmission electron microscope.

Advanced In Situ TEM Microchip with Excellent Temperature Uniformity and High Spatial Resolution

Semi-custom Methodology to Fabricate Transmission Electron Microscopy Chip for in Situ Characterization of Nanodevices and Nanomaterials

Temperature Sensor of MoS2 Based on Hybrid Plasmonic Waveguides

Multi-Stimuli Operando Transmission Electron Microscopy for Two-Terminal Oxide-Based Devices

Development of in Situ Characterization of Two-Dimensional Materials Grown on Insulator Substrates with Spectroscopic Photoemission and Low Energy Electron Microscopy

In Situ Atomic‐Scale Observation of Monolayer MoS 2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)

Construction of a novel in-situ measurement system combining SEM with a STM-TEM holder

In situ comprehensive characterization of optoelectronic nanomaterials for device purposes.

An in-situ TEM microreactor for real-time nanomorphology & physicochemical parameters interrelated characterization

Fiber Optic SPR Sensor Based on the Heterostructure of MoS2/WS2 with High Figure of Merit

Scanning Plasmon-Enhanced Microscopy for Simultaneous Optoelectrical Characterization

Flexible Electronics: Tailoring of Silver Nanocubes with Optimized Localized Surface Plasmon in a Gap Mode for a Flexible MoS2 Photodetector (adv. Funct. Mater. 26/2019)