Abstract:Localized surface plasmon resonances of nanostructured metals and Mie resonances of submicron-structured semiconductors couple with electromagnetic waves, producing extreme light concentration. These phenomena have led to the development of plasmonics and Mie-tronics, and the volume and quality of fundamental research, novel techniques, and applications in these fields is increasing. Thanks to technological progress, localized surface plasmon resonances can be imaged with high spatial (>0.05 nm), energetic (>0.05 meV), and temporal (0.2 fs) resolutions using three modalities: cathodoluminescence (CL), electron energy loss spectroscopy (EELS), and scanning near-field optical microscopy (SNOM). In addition, Mie resonances, which occur in larger-sized dielectric materials with low electric conductivity (i.e., submicron-structured semiconductors), can be imaged using a far-field confocal spectromicroscopy. Although there have been various landmark surface plasmon and Mie resonance imaging results based on both electron and optical spectromicroscopy techniques, so far, perspectives have been focused exclusively on one topic or the other. Moreover, Mie-tronics is a rapidly expanding field, but there are no published reviews of Mie scattering/resonance mapping experiments. A combined overview of the mutually relevant fields of both optical and electron spectroscopic imaging should provide important insights. Furthermore, direct comparisons between plasmonics and Mie-tronics studies are valuable from the viewpoints of physical chemistry and materials science. Herein, representative state-of-the-art localized surface plasmon and Mie resonance mapping results obtained using four imaging modalitiesCL, EELS, SNOM, and far-field confocal spectromicroscopyare described, and the advantages and disadvantages of each, together with future perspectives, are discussed.

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