Abstract:Piezotronic transistor operating in the quantum tunneling regime has recently roused wide interest for developing ultrasensitive strain sensing with applications in wearable electronics and human-machine interfaces. However, the lack of a strict theoretical demonstration from a quantum perspective renders the development of such an emerging area particularly slow due to their complex fabrication process and vulnerable experimental interference. Here, by combining third-dimensional self-consistent calculation with a nonequilibrium Green's function framework, we study the intrinsic device properties of piezotronic tunneling transistor (PTT) based on AlN/GaN core-shell nanowire. The results show that strain-induced piezoelectric polarization can remarkably tune tunneling barrier height and width, both of which are increased by tensile strain and decreased by compressive strain. At a moderate strain amplitude of 1.0% and bias of 2.0 V, the strain-induced change in effective barrier height and width can reach as high as 0.5 eV and 4.0 nm, respectively. This remarkable tunability in the barrier allows for an ultrahigh on/off current ratio 1017, and giant gauge factor 1.2 x 108 in current and 1.1 x 1013 in resistance. The performance can be further optimized by properly tailoring device architectures, including insulator thickness, nanowire length, or core-shell size. Our demonstration of the PTT with combined quantum tunneling and piezotronic effect opens a window for designing highly sensitive, large on/off ratio and low-power strain sensing.

Strain-induced polarization modulation at GaN/Ti interface for flexible thin-film sensor

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/GaN Core-Shell Nanowire

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Dynamically Modulated GaN Whispering Gallery Lasing Mode for Strain Sensor

Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Novel and Dual-Mode Strain-Detecting Performance Based on a Layered NiO/ZnO P-N Junction for Flexible Electronics

Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics.

Flexoelectronics of Centrosymmetric Semiconductors

Highly sensitive strain sensors based on piezotronic tunneling junction

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

A Flexible Piezoelectric Strain Sensor Array with Laser-Patterned Serpentine Interconnects

A Reliable Strain Sensor Based on Bridging GaN Nanowires

Unidirectional Electron-Tunnelling Flexible PDMS Strain Sensor with Aligned Carbon Nanotubes

Polarity-manipulation Based on Nanoscale Structural Transformation on Strained 2D MgO

Improving the Photoresponse Performance of Monolayer MoS2 Photodetector Via Local Flexoelectric Effect

Wearable and Ultrasensitive Strain Sensor Based on High-Quality GaN Pn Junction Microwire Arrays

Tailoring The Energy Band In Flexible Photodetector Based On Transferred Ito/Si Heterojunction Via Interface Engineering

Modulating the photoresponse performance of the flexible Si/ZnO film heterojunction photodetectors by piezo-phototronic effect

Piezotronic AlGaN Nanowire Schottky Junctions Grown on a Metal Substrate