Abstract:Piezotronic transistor operating in the quantum tunneling regime has recently roused wide interest for developing ultrasensitive strain sensing with applications in wearable electronics and human-machine interfaces. However, the lack of a strict theoretical demonstration from a quantum perspective renders the development of such an emerging area particularly slow due to their complex fabrication process and vulnerable experimental interference. Here, by combining third-dimensional self-consistent calculation with a nonequilibrium Green's function framework, we study the intrinsic device properties of piezotronic tunneling transistor (PTT) based on AlN/GaN core-shell nanowire. The results show that strain-induced piezoelectric polarization can remarkably tune tunneling barrier height and width, both of which are increased by tensile strain and decreased by compressive strain. At a moderate strain amplitude of 1.0% and bias of 2.0 V, the strain-induced change in effective barrier height and width can reach as high as 0.5 eV and 4.0 nm, respectively. This remarkable tunability in the barrier allows for an ultrahigh on/off current ratio 1017, and giant gauge factor 1.2 x 108 in current and 1.1 x 1013 in resistance. The performance can be further optimized by properly tailoring device architectures, including insulator thickness, nanowire length, or core-shell size. Our demonstration of the PTT with combined quantum tunneling and piezotronic effect opens a window for designing highly sensitive, large on/off ratio and low-power strain sensing.

A Reliable Strain Sensor Based on Bridging GaN Nanowires

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Wearable and Ultrasensitive Strain Sensor Based on High-Quality GaN Pn Junction Microwire Arrays

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/GaN Core-Shell Nanowire

Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

A practical route towards fabricating GaN nanowire arrays

Asymmetric Behavior in Flexible Piezoelectric Strain Sensors Made of Single Zno Nanowires

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Piezotronic AlGaN Nanowire Schottky Junctions Grown on a Metal Substrate

Flexible Piezoresistive Sensors Based on "dynamic Bridging Effect" of Silver Nanowires Toward Graphene

Dynamically Modulated GaN Whispering Gallery Lasing Mode for Strain Sensor

A Self-Powered Piezotronic Strain Sensor Based on Single ZnSnO3 Microbelts

Piezoresistance Behaviors of Ultra-Strained SiC Nanowires

Flexible and high-performance piezoresistive strain sensors based on carbon nanoparticles@polyurethane sponges

Piezopotential gated nanowire--nanotube hybrid field-effect transistor.

Controllable Fabrication of Percolative Metal Nanoparticle Arrays Applied for Quantum Conductance-Based Strain Sensors

Ultra-Sensitive Strain Sensors Based on Piezoresistive Nanographene Films

Strain-induced polarization modulation at GaN/Ti interface for flexible thin-film sensor

Highly Stretchable Strain Sensors Based on AgNWs/PV A Nanocomposite Hydrogels

Polypyrrole-coated copper nanowire-threaded silver nanoflowers for wearable strain sensors with high sensing performance