Abstract:Formation of silicon affects different physical properties of silicon nitride ceramics. Decomposition of Si3N4 and formation of free Si are highly important processes and depend on many factors. The proposed method of combined nano-Raman spectroscopy and X-ray diffraction (XRD) allows quantitative analysis of Si in silicon nitride. Raman spectroscopy enables the determination of atomic bonds and rapid and easy identification of free silicon. Further analysis of the crystalline phases by XRD enables the calculation of the amount of free silicon. The proposed complex method allows the characterization of such complicated processes as silicon nitride decomposition, microstructure formation and, in particular, the formation of the nanoscale grain boundary phase because Si nanosized precipitates are the nucleants of secondary phases during crystallization. Strong 522.8 cm−1 mode and 943.1–984.3 cm−1 transverse optical modes of free Si were clearly observed in the investigated silicon nitride that was subjected to pressureless sintering at 1800 °C. Reported ceramics demonstrated typical microstructures with elongated grains and relatively high microhardness and Young's modulus. It was shown that the aspect ratio depended linearly on the microhardness and Young's modulus. High values of the Young's modulus (more than 290 GPa) and microhardness (more than 1800 HV) were shown for reported silicon nitride produced by hot pressing and pressureless sintering via cold isostatic pressing with a higher quantity of sintering agent. The features of molecular structure of the reported Si3N4 ceramics were clearly described and discussed in detail and were found to be in good agreement with the microstructure and phase composition of these ceramics.

Optical properties of pyrolytic Silicon Nitride SiNx enriched with silicon

Properties of "stoichiometric" Silicon Oxynitride Films

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Microstructures and Optical Properties of SiNx Films

New method of free silicon determination in pressureless sintered silicon nitride by Raman spectroscopy and XRD

Optical Properties and Microstructure of Silicon Nitride Film Synthesized by Ion Beam Enhanced Deposition

Optical & Electronic Properties of Carbon Nitride Thin Films

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Silicon nitride resistance switching MIS cells doped with silicon atoms

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers

Optical Properties and Local Bonding Configurations of Hydrogenated Amorphous Silicon Nitride Thin Films

Optical properties of silicon rich silicon nitride (SixNyHz) from first principles

Memory Effect in Silicon Nitride in Silicon Devices

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach

The Variation of Physical Properties of Plasma‐Deposited Silicon Nitride and Oxynitride with Their Compositions