Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

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Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Development of a silicon carbide radiation detection system and experimentation of the system performance

A neutron beam monitor based on silicon carbide semiconductor coated with 6LiF converter

Defect Annealing of Neutron-Irradiated Silicon Crystals

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope

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Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Ag Out-Surface Diffusion in Crystalline SiC with an Effective SiO2 Diffusion Barrier

Temperature Effects on Annealing Crucial Deep-Level Defects in Neutron-Irradiated Silicon: Multiscale Modeling

The effect of temperature and cascade collision on thermal conductivity of 3C-SiC: A molecular dynamics study

Direct Temperature Monitoring for Semiconductors in Plasma Immersion Ion Implantation

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

The microstructure and physical properties of AlN and SiC ceramics after irradiation with 2 MeV Au ions

Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide

3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

Hermeticity of SiC/SiC composite and monolithic SiC tubes irradiated under radial high-heat flux

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

In situ high-temperature 3D imaging of the damage evolution in a SiC nuclear-fuel cladding material