Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Study on the Influence of the Pulling Rate on the Axial and Radial Uniformity of Gallium in Czochralski Monocrystalline Silicon Crystal

Effect of Pulling Rates on Quality of La2−xBaxCuO4 Single Crystal

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

(Invited) Defects in Cast-Mono Crystalline Silicon

Germanium in Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Germanium doping for improved silicon substrates and devices

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application

Intrinsic Gettering in Germanium-Doped Czochralski Crystal Silicon Crystals