Abstract:Summary form only. Germanium doped Czochralski silicon has been invented and investigated last decade. It has been used in ultra larger integrated circuits (ULSI). It was reported that germanium doping in Czochralski silicon could eliminate void defects, enhance oxygen precipitation, improving internal gettering ability, and also increase mechanical strength. In this presentation, germanium doped crystal silicon used to fabricate silicon solar cells has been reviewed on basis of our recent work. The behavior of germanium-doped crystal silicon used for solar cells, specially its mechanical strength and influence on light degardation of cells, has been discussed. It is considered that germanium doping will not affect the electrical properties of silicon wafers, but could increase the mechanical strength of silicon wafers so as to decrease the breakage, which is benefit for low-cost solar cells. In our experiments, both germanium doped single-crystalline silicon ingot and germanium doped multi-crystalline silicon ingot were manufactured. The samples had a germanium doping concentration of about 1018 cm-3~1019 cm-3. The three-point bending, indentation, scratch, and dislocation moving techniques were used to investigate the fracture strength of silicon wafers with or without germanium doping. It was indicated that germanium doping increased the fracture strength by about 20% comparing to conventional silicon wafers. Furthermore, it was found that during wafer slicing, germanium doped silicon has a relatively lower fracture percentage than conventional silicon. Furthermore, the solar cells made of germanium doped silicon had slightly higher average efficiency than that of conventional silicon. It is considered that germanium-doped crystal silicon possesses higher mechanical strength, and suppresses the light degradation of sola cells under light illumination. It is benefit to use germanium-doped crystal silicon to fabricate sol- - ar cells.

Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

(Invited) Defects in Cast-Mono Crystalline Silicon

Germanium in Czochralski Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Germanium-doped Crystal Silicon for Solar Cells

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Crystal Growth and Oxygen Precipitation Behavior of 300 Mm Nitrogen-Doped Czochralski Silicon

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Controlling Dislocation Gliding and Propagation in Quasi-Single Crystalline Silicon by Using <110>-Oriented Seeds

A Lead-Iodide Based Single Crystal Semiconductor: Exploring Multi-Orientation Photoconductive Behaviour Via Intervening Isopropyl Viologen Component Between The Inorganic [Pb2i6](N)(2-) Wires

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Germanium-Doped Crystalline Silicon: A New Substrate for Photovoltaic Application

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Study on the Influence of the Pulling Rate on the Axial and Radial Uniformity of Gallium in Czochralski Monocrystalline Silicon Crystal

Dissolution of Oxygen Precipitates in Germanium-Doped Czochralski Silicon During Rapid Thermal Annealing

Selective crystal growth of indium selenide compounds from saturated solutions grown in a selenium vapor

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Intrinsic Gettering in Germanium-Doped Czochralski Crystal Silicon Crystals