Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O 3 thin film memristor

Peng-Zu Ge,Hui Tang,Xian-Xiong Huang,Xin-Gui Tang,Yan-Ping Jiang,Qiu-Xiang Liu
DOI: https://doi.org/10.1016/j.mtcomm.2023.105593
IF: 3.8
2023-02-12
Materials Today Communications
Abstract:In this work, the amorphous SrFe 0.1 Ti 0.9 O 3-δ ( a -SFT10) thin film was prepared on FTO/Glass substrate by chemical solution deposition process and then annealed at 500 °C. Step Profiler measurements and SEM images revealed that the thickness of the a-SFT10 film was around 300 nm. The a -SFT10 thin film was found to have a smooth surface but was not crystalline. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical states of the film. Fe 2+ and Fe 3+ coexist in a -SFT10, according to XPS results, with Fe 3+ being the dominating state. The mixed valence state of iron ions may be related to oxygen vacancies. Current-voltage characteristics were conducted to study the electrical properties. The uniform switching voltages, high switch ratio and good endurance were obtained. The ratio of high and low resistance ( R H /R L ) is up to 10 3 under positive bias voltage. The physical mechanisms underlying resistance switching behaviors were also investigated. The results show that the Ohmic, space charge limited current and Schottky conduction mechanisms dominated in different voltage ranges of A-SFT10 films, respectively. The oxygen vacancies associated with the acceptor doping play a significant role in the current characteristic in Au/ a -SFT10/FTO/Glass device. Our findings suggest that the device has potential applications in future resistive random access memory.
materials science, multidisciplinary
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