Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

New-Generation Ferroelectric AlScN Materials

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

AlScN: A III-V semiconductor based ferroelectric

Examining the ferroelectric characteristics of aluminum nitride‐based thin films

Ultrathin AlScN for low-voltage driven ferroelectric-based devices

Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films

In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

Integration of Ferroelectric Al 0.8 Sc 0.2 N on Si (001) Substrate

Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode

ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

Molecular dynamics simulations on ferroelectricity of AlN thin films