An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

Ding Wang,Ping Wang,Shubham Mondal,Subhajit Mohanty,Tao Ma,Elaheh Ahmadi,Zetian Mi

DOI: https://doi.org/10.1002/aelm.202200005

IF: 6.2

2022-03-15

Advanced Electronic Materials

Abstract:Advanced Electronic Materials, EarlyView.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Jingbin Zhu,Zhigang Yin,Zhen Fu,Yajuan Zhao,Xingwang Zhang,Xin Liu,Jingbi You,Xingxing Li,Junhua Meng,Heng Liu,Jinliang Wu

DOI: https://doi.org/10.1016/j.jcrysgro.2016.11.081

IF: 1.8

2017-01-01

Journal of Crystal Growth

Abstract:Ferroelectric field-effect transistor has long been considered as a promising nonvolatile memory technology, but its application is limited by the poor scalability. Here we show that this problem can be solved by epitaxially integrating tetragonal BiFeO3, a stress-induced metastable phase which exhibits remarkably low dielectric permittivity and high coercive field, on the silicon platform. Tetragonal BiFeO3 was stabilized on (001)-oriented silicon by using Bi2SiO5, which is chemically and structurally compatible with both silicon and tetragonal BiFeO3, as the buffer layer. Unlike the commonly observed M-C structure, the obtained BiFeO3 layer exhibits a true tetragonal symmetry. An unprecedented high memory window of 6.5 V was observed for the Au/BiFeO3/Bi2SiO5/Si capacitor with BiFeO3 thickness of 135 nm. The epitaxial integration of tetragonal BiFeO3 with silicon may pave a possible avenue for nanosized, power-efficient ferroelectric nonvolatile memories.
New-Generation Ferroelectric AlScN Materials

Yalong Zhang,Qiuxiang Zhu,Bobo Tian,Chungang Duan

DOI: https://doi.org/10.1007/s40820-024-01441-1

IF: 26.6

2024-06-26

Nano-Micro Letters

Abstract:Highlights Ferroelectricity and domain dynamics of emerging ferroelectric AlScN films were discussed. The performance optimization of ferroelectric AlScN films grown by different deposition techniques was comprehensively analyzed. The challenges and perspectives regarding the commercial avenue of AlScN-based memories and in-memory computing applications were summarized.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Haiming Qin,Nan He,Cong Han,Miaocheng Zhang,Yu Wang,Rui Hu,Jiawen Wu,Weijing Shao,Mohamed Saadi,Hao Zhang,Youde Hu,Yi Liu,Xinpeng Wang,Yi Tong

DOI: https://doi.org/10.3390/nano14110986

2024-06-06

Abstract:Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future.
ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window

Shubham Mondal,Ding Wang,Mingtao Hu,Jiangnan Liu,Minming He,Ping Wang,Zetian Mi

DOI: https://doi.org/10.1109/ted.2023.3295792

IF: 3.1

2023-08-25

IEEE Transactions on Electron Devices

Abstract:In this article, we demonstrate ferroelectric field-effect transistors (FeFETs) in a back-gate configuration by harnessing the polarization switching characteristics of epitaxially grown ferroelectric scandium aluminum nitride (ScAlN) to control the conductance of an indium-tin oxide (ITO) channel. The ferroelectric transistors show a large memory window of ~0.42 V/nm. A high ON current along with a large ON/OFF current ratio of ~106 is observed owing to ferroelectric polarization-induced carrier modulation in the ITO channel. The distinct ON/OFF states and the memory window were preserved after 105 cycles while simultaneously showing retention time >105 s. The integration of a nitride ferroelectric (ScAlN) with a promising channel material (ITO) as demonstrated in this work provides a unique opportunity to realize high-performance FeFETs for in-memory computing and edge intelligent applications.

engineering, electrical & electronic,physics, applied
In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Meng Han Ao,Zheng,Qi Lan Zhong,Wen Di Zhang,Xu Hou,Xiao Jie Chai,Chao Wang,Hao Chen Fan,Jian Wei Lian,Yan Cheng,Jie Wang,Jun Jiang,An Quan Jiang

DOI: https://doi.org/10.1021/acsami.1c08022

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:With the formation of mesa-like cells at their surfaces, LiNbO3 thin films are useful for integrating high-density domain wall memory. However, the material is too hard and inert to etch the cells with inclined side edges that help to diminish polarization retention. Moreover, etching could damage the ferroelectricity of the film. To overcome these drawbacks in forming memory cells directly, we developed a technique to deposit two gapped electrodes in the film surface, without needing to etch the film. While applying an in-plane write voltage above a coercive voltage, the domain within the gap is reversibly switched along with the creation/erasure of conducting domain walls against the peripheral unswitched domain. This technique enables "on"/"off" current read of the written information. Unfortunately, the switched domain within the gap generally has poor retention and a weak wall current arises from the presence of a strong depolarization field. To overcome this problem, we fabricated a type of embedded electrode that diffuses thickness-wise into the LiNbO3 thin film to form a parallel-plate-like structure to screen the depolarization field. The switched domains now had good retention and carry large wall currents. Alternatively, without the embedded electrodes, the switched domains within the cells can be stabilized with increasing gap distance above a critical length of 320 nm. The two methods foreshadow the possibility in the future to fabricate damage-free LiNbO3 memory cells without etching.
Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Ding Wang,Ping Wang,Minming He,Jiangnan Liu,Shubham Mondal,Mingtao Hu,Danhao Wang,Yuanpeng Wu,Tao Ma,Zetian Mi

DOI: https://doi.org/10.1063/5.0143645

IF: 4

2023-02-27

Applied Physics Letters

Abstract:In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces were obtained by utilizing molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range of 3.8 V, a large ON/OFF ratio of 3 × 10 7 , and reconfigurable output characteristics depending on the poling conditions. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance, with subthreshold swing values approaching 110 and 30 mV/dec under forward and backward gate sweeps, respectively. The results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and are promising for nitride-based nonvolatile, multi-functional, reconfigurable power, and radio frequency devices as well as memory devices and negative capacitance transistors for next-generation electronics.

physics, applied
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

Ping Wang,Ding Wang,Nguyen M. Vu,Tony Chiang,John T. Heron,Zetian Mi

DOI: https://doi.org/10.1063/5.0054539

IF: 4

2021-05-31

Applied Physics Letters

Abstract:We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for ScxAl1-xN films with Sc contents in the range of 0.14–0.36. Sc0.20Al0.80N, which is nearly lattice-matched with GaN, exhibiting a coercive field of ∼ 4.2 MV/cm at 10 kHz and a remnant polarization of ∼135 μC/cm2. After electrical poling, Sc0.20Al0.80N presents a polarization retention time beyond 105 s. No obvious fatigue behavior can be found with up to 3 × 105 switching cycles. The work reported here is more than a technical achievement. The realization of ferroelectric single-crystalline III–V semiconductors by molecular beam epitaxy promises a thickness scaling into the nanometer regime and makes it possible to integrate high-performance ferroelectric functionality with well-established semiconductor platforms for a broad range of electronic, optoelectronic, and photonic device applications.

physics, applied
AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Cuihong Kai,Yue Wang,Xiaoping Liu,Xiao Liu,Xuqing Zhang,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1002/adom.202202105

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Neuromorphic computing promises to overcome the Von Neumann bottleneck of traditional computers. Optoelectronic synaptic devices are greatly desired given their potential applications in neuromorphic computing. In this work, optoelectronic synaptic devices with long-term memory are fabricated. The devices are based on a GaN/AlGaN/AlN/GaN heterojunction and a SiNx charge trapping layer. Synaptic functionalities including excitatory postsynaptic current, paired pulse facilitation, and transition from short-term memory to long-term memory are realized. The retention time of long-term memory may be more than 10 years, demonstrating the reliable charge storage of the devices. Logic functions are also realized by synergizing the photogating and electrical gating of the devices. The responsivity and specific detectivity are 2.64 x 10(5) A W-1 and 1.79 x 10(16) Jones at the optical power density of 1.4 mW cm(-2), respectively. In addition, the devices have a reconfigurable switch of 1000 cycles with working temperature up to 200 degrees C.
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Kwan-Ho Kim,Dixiong Wang,P. Musavigharavi,D. Jariwala,Keshava Katti,Xiwen Liu,J. Miao,R. Olsson,E. Stach,Jeffrey X. Zheng

DOI: https://doi.org/10.1021/acs.nanolett.0c05051

2020-10-22

Abstract:Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS2 channel. Our devices show an ON/OFF ratio of ∼106, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 104 cycles and state retention up to 105 s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.

Medicine,Engineering,Physics,Materials Science
Ultrathin AlScN for low-voltage driven ferroelectric-based devices

Georg Schönweger,Md Redwanul Islam,Niklas Wolff,Adrian Petraru,Lorenz Kienle,Hermann Kohlstedt,Simon Fichtner

DOI: https://doi.org/10.1002/pssr.202200312

2022-07-05

Abstract:Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an in situ Pt capping approach to avoid oxidation of the Al0.72Sc0.28N film surface. Structural characterization by X-ray diffraction and transmission electron microscopy reveals the established epitaxy. The thus obtained high-quality interfaces in combination with the in situ capping is expected to facilitate ferroelectric switching of AlScN in the ultrathin regime. The analysis of the relative permittivity and coercive field dependence on the Al0.72Sc0.28N film thicknesses in the range of 100 nm down to 10 nm indicates only moderate scaling effects, suggesting that the critical thickness for ferroelectricity is not yet approached. Furthermore, the deposited layer stack demonstrates the possibility of including ultrathin ferroelectric AlScN into all-epitaxial GaN-based devices using sputter deposition techniques. Thus, our work highlights the integration and scaling potential of all-epitaxial ultrathin AlScN offering high storage density paired with low voltage operation desired for state of the art ferroelectric memory devices.

Applied Physics,Materials Science
GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Yi Shi,Jin Lv,Hongguan Yang,Yubin Chen,Guangli Wang,Zerui Wang,Lin Pu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1002/pssc.200880712

2009-01-01

Abstract:Charge storage characteristics of MOSFET memory structure based on GeSi/Si hetero-nanocrystals (HNCs) are investigated by numerical simulation and experimental measurement. Owing to the advantages of a compound potential well and a higher offset at the valence band, this kind of memory has well hole storage. It is expected to serve as a high-performance nonvolatile memory operating at room temperature.[GRAPHICS](C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

Samuel Yang,Ding Wang,Md Mehedi Hasan Tanim,Danhao Wang,Zetian Mi

DOI: https://doi.org/10.1063/5.0200057

IF: 4

2024-05-06

Applied Physics Letters

Abstract:In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy ScAlGaN. Sc0.2Al0.45Ga0.35N films are grown by plasma-assisted molecular beam epitaxy and exhibit a surface roughness of 0.5 nm, limited by the roughness of the underlying molybdenum template. Polarization-electric field and positive-up-negative-down measurements reveal unambiguous ferroelectric switching with a coercive field of ∼5.5 MV cm−1 at 10 kHz and high remanent polarization of ∼150 μC cm−2. Time-dependent measurements suggest that the polarization reversal behavior adheres to the Kolmogorov–Avrami–Ishibashi model and follows a scheme of domain nucleation and growth. Detailed piezoresponse force microscopy studies further elucidate the evolution of polarity reversal domains in wurtzite nitride ferroelectrics and support the notion that the growth of inversion domains occurs via an in-plane motion of the domain walls. The realization of functional ferroelectric quaternary alloys in the wurtzite nitride family extends beyond being a technical demonstration. The additional degree of bandgap, band alignment, lattice parameter, and piezoelectric constant tunability achievable through quaternary alloys unveils a vast dimension through which wurtzite nitride ferroelectrics can be optimally engineered for a broad variety of high-performance electronic, optoelectronic, and acoustic devices and systems.

physics, applied
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Ding Wang,Ping Wang,Shubham Mondal,Mingtao Hu,Yuanpeng Wu,Tao Ma,Zetian Mi

DOI: https://doi.org/10.1002/adma.202210628

IF: 29.4

2023-03-11

Advanced Materials

Abstract:Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can potentially alleviate the energy constraints and complexity/footprint challenges imposed by digital von Neumann systems. Yet the current ferroelectric resistive memories suffer from either low ON/OFF ratios/imprint or limited compatibility with mainstream semiconductors. Here we demonstrate, for the first time, ferroelectric and analog resistive switching in an epitaxial nitride heterojunction comprising ultrathin (∼5 nm) nitride ferroelectrics, i.e., ScAlN, with potentiality to bridge the gap between performance and compatibility. High ON/OFF ratios (up to 105), high uniformity, good retention ( 105 s) and cycling endurance (>104) are simultaneously demonstrated in a metal/oxide/nitride ferroelectric junction. We further demonstrate that the memristor can provide programmability to enable multistate operation and linear analogue computing as well as image processing with high accuracy. Neural network simulations based on the weight update characteristics of the nitride memory yielded an image recognition accuracy of 92.9% (baseline 96.2%) on the images from Modified National Institute of Standards and Technology. The non‐volatile multi‐level programmability and analog computing capability provide first‐hand and landmark evidence for constructing advanced memory/computing architectures based on emerging nitride ferroelectrics, and promote homo and hybrid integrated functional edge devices beyond silicon. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications

Guogang Liu,San-Huang Ke

DOI: https://doi.org/10.1021/acs.nanolett.4c01916

IF: 10.8

2024-08-23

Nano Letters

Abstract:Achieving higher-order multistates with mutual interstate switching at the nanoscale is essential for high-density storage devices; yet, it remains a significant challenge. Here, we demonstrate that integrating A-type antiferromagnetic semiconductors sandwiched between ferroelectric layers is an effective strategy to achieve high-performance multistate data storage. Taking the Sc(2)CO(2)/VSi(2)P(4) bilayer (bi-VSi(2)P(4))/Sc(2)CO(2) van der Waals multiferroic heterostructure as an example, our...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Thai-Son Nguyen,Naomi Pieczulewsi,Chandrashekhar Savant,Joshua J.P. Cooper,Joseph Casamento,Rachel S. Goldman,David A. Muller,Huili G. Xing,Debdeep Jena

DOI: https://doi.org/10.1063/5.0216133

2024-10-12

Abstract:AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single layer Al$_{1-x}$Sc$_x$N/GaN heterostructures exhibited lattice-matched composition within $x$ = 0.09 -- 0.11 using substrate (thermocouple) growth temperatures between 330 $ ^\circ$C and 630 $ ^\circ$C. By targeting the lattice-matched Sc composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface properties as confirmed by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 $\times$ 10$^{14}$/cm$^2$ for twenty channels. The sheet density scales with the number of AlScN/GaN periods. By identifying lattice-matched growth condition and using it to generate multiple conductive channels, this work enhances our understanding of the AlScN/GaN material platform.

Materials Science
Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Shen B.,Li W.P.,Wang X. S.,Yan F.,Zhang R.,Bi Z.X.,Shi Y.,Liu Z. G.,Zheng Y. D.,University of Tokyo

DOI: https://doi.org/10.1557/proc-693-i11.41.1

2001-01-01

MRS Proceedings

Abstract:An Al x Ga 1−x N/GaN-based metal-ferroelectric-semiconductor (MFS) structure is developed by depositing a Pb(Zr 0.53 Ti 0.47 )O 3 film on a modulation-doped Al 0 22 Ga 0.78 N/GaN heterostructure. In high-frequency capacitance-voltage (C-V) measurements, the sheet concentration of the two-dimensional electron gas at the Al 0.22 Ga 0.78 N/GaN interface in the MFS structure decreases from 1.56 × 10 13 cm −2 to 5.6 × 10 12 cm −2 under the −10 V applied bias. A ferroelectric C-V window of 0.2 V in width near −10V bias is observed, indicating that the Al x Ga 1−x N/GaN MFS structure can achieve memory performance without the reversal of the ferroelectric polarization. The results indicate that Al x Ga 1−nx N/GaN heterostructures are promising semiconductor channel candidates for MFS field effect transistors.
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy

Ding Wang,Ping Wang,Boyu Wang,Zetian Mi

DOI: https://doi.org/10.1063/5.0060021

IF: 4

2021-09-13

Applied Physics Letters

Abstract:We report on the ferroelectric properties of single-phase wurtzite ScGaN grown on GaN by plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was confirmed by detailed electrical characterization. Coercive fields in the range of 2.0–3.0 MV/cm and large, retainable remnant polarization in the range of 60–120 μC/cm2 are unambiguously demonstrated for ScGaN epilayers with Sc contents of 0.31–0.41. Taking advantage of the widely tunable energy bandgap of III-nitride semiconductors, the demonstration of ferroelectricity in ScGaN, together with the recently reported ferroelectric ScAlN, will enable a broad range of emerging applications with combined functionality in ferroelectric, electronic, optoelectronic, photovoltaic, and/or photonic devices and systems.

physics, applied
AlScN/n-GaN Ferroelectric Memristors With Controllable On/Off Ratios and Reversible Bipolar Resistive Switching Characteristics

Mingrui Liu,Shunpeng Lu,Yuping Jia,Hang Zang,Ke Jiang,Xiaojuan Sun,Dabing Li

DOI: https://doi.org/10.1109/led.2023.3347233

IF: 4.8157

2024-03-02

IEEE Electron Device Letters

Abstract:AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over attributed to the coexistence of heterointerface energy band modulation and trap-assisted conduction mechanisms. Unlike typical ferroelectric memristors, the device presents obvious reproducible bipolar resistive switching characteristics without polarization flipping due to the extra trap-assisted conductive path, which effectively reduces energy consumption. Remarkably, multi-level ON/OFF ratios and reversible bipolar resistive switching characteristics can be achieved by regulating the magnitude and direction of ferroelectric polarization, indicating that different operating modes can be achieved on a single device, which shows promise for improving device integration density and information security. These findings help elucidate the resistive switching mechanism and the effect of ferroelectric polarization on device properties, which pave the way for applications of power-efficient CMOS-compatible nitride memristors.

engineering, electrical & electronic
Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes

Kwan-Ho Kim,Zirun Han,Yinuo Zhang,Pariasadat Musavigharavi,Jeffrey Zheng,Dhiren K. Pradhan,Eric A. Stach,Roy H. Olsson,Deep Jariwala

DOI: https://doi.org/10.1021/acsnano.4c03541

IF: 17.1

2024-06-05

ACS Nano

Abstract:The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates nonvolatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL)-compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

Jing Gao,Yu‐Chieh Chien,Lingqi Li,Hock Koon Lee,Subhranu Samanta,Binni Varghese,Heng Xiang,Minghua Li,Chen Liu,Yao Zhu,Li Chen,Kah‐Wee Ang

DOI: https://doi.org/10.1002/smll.202404711

IF: 13.3

2024-08-19

Small

Abstract:The intrinsic ferroelectric switching characteristics of aluminum scandium nitride has been revealed and the profound effect of defects on the nucleation and domain propagation is systematically studied. The device integration of aluminum scandium nitride and 2D materials holds great potential for neuromorphic computing. Aluminum Scandium Nitride (Al1−xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation‐based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183 ps, is captured, and effectively simulated using a nucleation‐limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long‐term reliability of devices is also confirmed by time‐dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field‐effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN‐based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

New-Generation Ferroelectric AlScN Materials

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Ultrathin AlScN for low-voltage driven ferroelectric-based devices

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy

AlScN/n-GaN Ferroelectric Memristors With Controllable On/Off Ratios and Reversible Bipolar Resistive Switching Characteristics

Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing