Abstract:Monoclinic β-phase Ga 2 O 3 , the most thermodynamically stable phase, is an interesting material for power electronics applications. In this study, we present an efficient approach, diverging from existing methods, for the successful deposition of β-Ga 2 O 3 thin films at low substrate temperatures without any post-annealing. Instead of relying on high substrate temperatures, we supplied sufficient thermal energy to the substrate by directly irradiating it with a 1064 nm ytterbium pulsed laser during RF sputtering. This eliminated the need for post-annealing and significantly reduced processing time. It also allowed for excellent control over the crystal structure and crystallinity formation of the thin films by providing excellent particle energy through heat transfer on the surface. The X-ray diffraction (XRD) scan of the sample deposited by irradiating a pulse laser to the substrate shows only three peaks corresponding to (−201), (−402) and (−603) of β-Ga 2 O 3 , indicating superior crystalline quality. The sample deposited at 2.5 mTorr working pressure maintained a thin film thickness of 207 nm and a grain size of 40.07 nm, and the energy band gap of the thin films was measured in the range of 4.45–4.64 eV. XPS, Auger, and PL optical analysis observed characteristic core-level peaks of β-Ga 2 O 3 and the suppression of oxygen vacancies due to the high binding energy. The oxygen content increased by 4.39 %, resulting in the O/Ga ratio rising to 1.19, which leads to a positive shift in the O 1s binding energy. Consequently, we demonstrated the induction of phase transition of Ga 2 O 3 into a stable β phase by introducing an in-situ pulse laser process during low temperature RF sputtering. These results have significant potential in various applications and are expected to contribute significantly to technological advancements.

Investigation of growth dynamics of β-Ga2O3 LPCVD by independently controlling Ga precursor and substrate temperature

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Effects of growth pressure on the characteristics of the -Ga<sub>2</sub>O<sub>3</sub> thin films deposited on (0001) sapphire substrates

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Controlled Lateral Epitaxial Growth in Vertical Β-Ga2o3 Nanowires on Sapphire by MOCVD

Effect of Temperature on the Structural and Optical Properties of Ga2O3Thin Films Grown on M-Plane Sapphire Substrates by Low-Pressure MOCVD

High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Low-temperature deposition of β-Ga 2 O 3 thin films employing in situ pulsed laser-assisted RF sputtering system

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Investigation on the -Ga<sub>2</sub>O<sub>3</sub> deposited on off-angled sapphire (0001) substrates