Abstract:The ability to directly monitor the states of electrons in modern field-effect devices—for example, imaging local changes in the electrical potential, Fermi level and band structure as a gate voltage is applied—could transform our understanding of the physics and function of a device. Here we show that micrometre-scale, angle-resolved photoemission spectroscopy<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-019-1402-1#ref-CR3">3</a> (microARPES) applied to two-dimensional van der Waals heterostructures<a href="/articles/s41586-019-1402-1#ref-CR4">4</a> affords this ability. In two-terminal graphene devices, we observe a shift of the Fermi level across the Dirac point, with no detectable change in the dispersion, as a gate voltage is applied. In two-dimensional semiconductor devices, we see the conduction-band edge appear as electrons accumulate, thereby firmly establishing the energy and momentum of the edge. In the case of monolayer tungsten diselenide, we observe that the bandgap is renormalized downwards by several hundreds of millielectronvolts—approaching the exciton energy—as the electrostatic doping increases. Both optical spectroscopy and microARPES can be carried out on a single device, allowing definitive studies of the relationship between gate-controlled electronic and optical properties. The technique provides a powerful way to study not only fundamental semiconductor physics, but also intriguing phenomena such as topological transitions<a href="/articles/s41586-019-1402-1#ref-CR5">5</a> and many-body spectral reconstructions under electrical control.

Probing the Inelastic Electron Tunneling via the Photocurrent in a Vertical Graphene van der Waals Heterostructure

Inelastic Tunneling Spectroscopy and Electron-Vibrational Coupling of Molecular Junctions

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Exciton-assisted electron tunneling in van der Waals heterostructures

A Study of Vertical Transport Through Graphene Toward Control of Quantum Tunneling

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Inelastic Electron Transport Through Mesoscopic Systems: Heating Versus Cooling And Sequential Tunneling Versus Cotunneling Processes

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy

Tunneling Spectroscopy of Metal-Oxide-graphene Structure

Exciton-assisted electron tunnelling in van der Waals heterostructures

Vibrational features in inelastic electron tunneling spectra

Unravelling the role of inelastic tunneling into pristine and defected graphene

Visualizing electrostatic gating effects in two-dimensional heterostructures

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons.

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Probing the graphene/substrate interaction by electron tunneling decay

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Inelastic Electron Tunneling Spectroscopy for Topological Insulators

Phonon and plasmon excitation in inelastic electron tunneling spectroscopy of graphite