Abstract:Since the first realization of reversible charge doping in graphene via field-effect devices, it has become evident how the induction of a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a sublattice symmetry breaking has also a profound impact on the polar response of graphene. By combining ab initio calculations and analytical modelling we show that for realistic band-gap values ( eV) the piezoelectric coefficient and the Born effective charge of graphene attain a giant value, independent on the gap. In particular the piezoelectric coefficient per layer of gapped mono- and bilayer graphene is three times larger than that of a large-gap full polar insulator as hexagonal Boron nitride (h-BN) monolayer, and 30% larger than that of a polar semiconductor as MoS2. This surprising result indicates that piezoelectric acoustic-phonons scattering can be relevant to model charge transport and charge-carrier relaxation in gated bilayer graphene. The independence of the piezoelectric coefficient and of the Born effective charge on the gap value follows from the connection between the polar response and the valley Chern number of gapped Dirac electrons, a relation previously identified for polar h-BN and made possible by the effective gauge-field description of the electron-lattice/strain coupling in these systems. In the small gap limit, where the adiabatic ab initio approximation fails, we implement analytically the calculation of the dynamical effective charge, and we establish a universal relation between the complex effective charge and the so-called Fano profile of the phonon optical peak. Our results provide a general theoretical framework to understand and compute the polar response in narrow-gap semiconductors, but may also be relevant for the contribution of piezoelectric scattering to the transport properties in Dirac-like systems.

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

Graphene Acoustic Phonon-Mediated Pseudo-Landau Levels Tailoring Probed by Scanning Tunneling Spectroscopy.

The tunnelling spectra of quasi-free-standing graphene monolayer

Raman Scattering and Tunable Electron–phonon Coupling in Single Layer Graphene

Gate-tunable quantum acoustoelectric transport in graphene

Understanding and engineering phonon-mediated tunneling into graphene on metal surfaces

Quantum behavior of graphene transistors near the scaling limit.

Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium

Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Gate-Tunable Resonance State and Screening Effects for Proton-Like Atomic Charge in Graphene.

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Direct Observation of Topological Phonons in Graphene

Measuring Phonon Dispersion and Electron-Phason Coupling in Twisted Bilayer Graphene with a Cryogenic Quantum Twisting Microscope

Inelastic Kondo-Andreev Tunneling in a Vibrating Quantum Dot

Exciton-assisted electron tunnelling in van der Waals heterostructures

Exciton-assisted electron tunneling in van der Waals heterostructures

Giant effective charges and piezoelectricity in gapped graphene