Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

On the negative capacitance in ferroelectric heterostructures

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

Spatially resolved steady-state negative capacitance

Electrodynamics of ferroelectric films with negative capacitance

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Design Space for Stabilized Negative Capacitance in HfO 2 Ferroelectric-Dielectric Stacks Based on Phase Field Simulation

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Harnessing ferroelectric domains for negative capacitance

Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Strain Tuning of Negative Capacitance in Ferroelectric KNbO 3 Thin Films

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Negative Capacitance beyond Ferroelectric Switches

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.

Quantum Inductance And Negative Electrochemical Capacitance At Finite Frequency In A Two-Plate Quantum Capacitor

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures