Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Harnessing ferroelectric domains for negative capacitance

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Spatially resolved steady-state negative capacitance

On the negative capacitance in ferroelectric heterostructures

Progress and future prospects of negative capacitance electronics: A materials perspective

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Ferroelectric Negative Capacitance Field Effect Transistor

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Negative Capacitance beyond Ferroelectric Switches

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Elastic amplification from negative capacitance

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials