Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Elastic amplification from negative capacitance

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Differential voltage amplification from ferroelectric negative capacitance

On the negative capacitance in ferroelectric heterostructures

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Spatially resolved steady-state negative capacitance

Harnessing ferroelectric domains for negative capacitance

Dielectric behavior and negative capacitance in multidomain ferroelectric/dielectric superlattices

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.

Use of negative capacitance to provide voltage amplification for low power nanoscale devices

Negative Capacitance beyond Ferroelectric Switches

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Non-Ergodic-Induced Negative Differential Piezoresponse in Relaxor Ferroelectrics

Progress and future prospects of negative capacitance electronics: A materials perspective

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Giant Negative Electrocaloric Effect Induced by Domain Transition in the Strained Ferroelectric Thin Film

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains